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Publications in Math-Net.Ru |
Citations |
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2021 |
| 1. |
E. V. Ivanova, P. A. Dementev, M. V. Zamoryanskaya, D. A. Zakgeim, D. Yu. Panov, V. A. Spiridonov, A. V. Kremleva, M. A. Odnoblyudov, D. A. Bauman, A. E. Romanov, V. E. Bugrov, “Study of charge carrier traps in bulk crystal gallium oxide $\beta$-Ga$_{2}$O$_{3}$”, Fizika Tverdogo Tela, 63:4 (2021), 421–426   ; Phys. Solid State, 63:4 (2021), 544–549 |
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| 2. |
D. A. Bauman, L. A. Pyankova, A. V. Kremleva, V. A. Spiridonov, D. Yu. Panov, D. A. Zakgeim, A. S. Bakhvalov, M. A. Odnoblyudov, A. E. Romanov, V. E. Bugrov, “Elemental and structural mapping of Czochralski-grown bulk (Al$_{x}$Ga$_{1-x}$)$_{2}$O$_{3}$, crystals”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:5 (2021), 19–22 ; Tech. Phys. Lett., 47:3 (2021), 218–221 |
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2020 |
| 3. |
D. A. Zakgeim, D. Yu. Panov, V. A. Spiridonov, A. V. Kremleva, A. M. Smirnov, D. A. Bauman, A. E. Romanov, M. A. Odnoblyudov, V. E. Bugrov, “Volume gallium oxide crystals grown from melt by the Czochralski method in an oxygen-containing atmosphere”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:22 (2020), 43–45 ; Tech. Phys. Lett., 46:11 (2020), 1144–1146 |
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2019 |
| 4. |
A. I. Pechnikov, S. I. Stepanov, A. V. Chikiryaka, M. P. Scheglov, M. A. Odnoblyudov, V. I. Nikolaev, “Thick $\alpha$-Ga$_{2}$O$_{3}$ layers on sapphire substrates grown by halide epitaxy”, Fizika i Tekhnika Poluprovodnikov, 53:6 (2019), 789–792 ; Semiconductors, 53:6 (2019), 780–783 |
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2016 |
| 5. |
Sh. Sh. Sharofidinov, V. I. Nikolaev, A. N. Smirnov, A. V. Chikiryaka, I. P. Nikitina, M. A. Odnoblyudov, V. E. Bugrov, A. E. Romanov, “On a reduction in cracking upon the growth of AlN on Si substrates by hydride vapor-phase epitaxy”, Fizika i Tekhnika Poluprovodnikov, 50:4 (2016), 549–552 ; Semiconductors, 50:4 (2016), 541–544 |
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| 6. |
G. A. Mikhailovskii, I. S. Polukhin, D. A. Rybalko, Yu. V. Solov’ev, M. A. Odnoblyudov, “Determination of topological parameters of a laser with passive mode-locking on the basis of InGaAlAs/InGaAs/InP heterostructures”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:9 (2016), 56–63 ; Tech. Phys. Lett., 42:5 (2016), 471–474 |
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