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Publications in Math-Net.Ru |
Citations |
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2023 |
| 1. |
S. O. Slipchenko, O. S. Soboleva, V. S. Golovin, N. A. Pikhtin, “Cavity optimisation of high-power InGaAs/AlGaAs/GaAs semiconductor lasers (<i>λ</i>=1060 nm) for efficient operation at ultrahigh pulsed pump currents”, Kvantovaya Elektronika, 53:1 (2023), 17–24  [Bull. Lebedev Physics Institute, 50:suppl. 5 (2023), S535–S546] |
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2022 |
| 2. |
S. O. Slipchenko, V. S. Golovin, O. S. Soboleva, I. A. Lamkin, N. A. Pikhtin, “Analysis of light–current characteristics of high-power semiconductor lasers (1060 nm) in a steady-state 2D model”, Kvantovaya Elektronika, 52:4 (2022), 343–350 [Quantum Electron., 52:4 (2022), 343–350  ] |
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2021 |
| 3. |
O. S. Soboleva, S. O. Slipchenko, N. A. Pikhtin, “Isotype $n$-AlGaAs/$n$-GaAs heterostructures optimized for efficient interband radiative recombination under current pumping”, Fizika i Tekhnika Poluprovodnikov, 55:5 (2021), 427–433 ; Semiconductors, 55 (2021), s8–s13 |
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2020 |
| 4. |
P. S. Gavrina, O. S. Soboleva, A. A. Podoskin, A. E. Kazakova, V. A. Kapitonov, S. O. Slipchenko, N. A. Pikhtin, “Study of the spatial and current dynamics of optical loss in semiconductor laser heterostructures by optical probing”, Fizika i Tekhnika Poluprovodnikov, 54:8 (2020), 734–742  ; Semiconductors, 54:8 (2020), 882–889 |
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| 5. |
O. S. Soboleva, V. S. Golovin, V. S. Yuferev, P. S. Gavrina, N. A. Pikhtin, S. O. Slipchenko, A. A. Podoskin, “Modeling the spatial switch-on dynamics of a laser thyristor ($\lambda$ = 905 nm) based on an AlGaAs/InGaAs/GaAs multi-junction heterostructure”, Fizika i Tekhnika Poluprovodnikov, 54:5 (2020), 478–483 ; Semiconductors, 54:5 (2020), 575–580 |
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| 6. |
S. O. Slipchenko, A. A. Podoskin, O. S. Soboleva, V. S. Yuferev, V. S. Golovin, P. S. Gavrina, D. N. Romanovich, I. V. Miroshnikov, N. A. Pikhtin, “Carrier-transport processes in $n^{+}$-GaAs/$n^{0}$-GaAs/$n^{+}$-GaAs isotype heterostructures with a thin wide-gap AlGaAs barrier”, Fizika i Tekhnika Poluprovodnikov, 54:5 (2020), 452–457 ; Semiconductors, 54:5 (2020), 529–533 |
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2019 |
| 7. |
S. O. Slipchenko, A. A. Podoskin, O. S. Soboleva, V. S. Yuferev, V. S. Golovin, P. S. Gavrina, D. N. Romanovich, I. V. Miroshnikov, N. A. Pikhtin, “Specific features of carrier transport in $n^{+}$–$n^{0}$–$n^{+}$ structures with a GaAs/AlGaAs heterojunction at ultrahigh current densities”, Fizika i Tekhnika Poluprovodnikov, 53:6 (2019), 816–823 ; Semiconductors, 53:6 (2019), 806–813 |
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| 8. |
P. S. Gavrina, O. S. Soboleva, A. A. Podoskin, D. N. Romanovich, V. S. Golovin, S. O. Slipchenko, N. A. Pikhtin, T. A. Bagaev, M. A. Ladugin, A. A. Marmalyuk, V. A. Simakov, “Experimental studies of the on-state propagation dynamics of low-voltage laser-thyristors based on AlGaAs/InGaAs/GaAs heterostructures”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:8 (2019), 7–11 ; Tech. Phys. Lett., 45:4 (2019), 374–378 |
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2018 |
| 9. |
I. S. Shashkin, O. S. Soboleva, P. S. Gavrina, V. V. Zolotarev, S. O. Slipchenko, N. A. Pikhtin, “All-electric laser beam control based on a quantum-confined heterostructure with an integrated distributed Bragg grating”, Fizika i Tekhnika Poluprovodnikov, 52:12 (2018), 1491–1498 ; Semiconductors, 52:12 (2018), 1595–1602 |
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