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Publications in Math-Net.Ru |
Citations |
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2022 |
| 1. |
S. A. Blokhin, A. V. Babichev, L. Ya. Karachinsky, I. I. Novikov, A. A. Blokhin, M. A. Bobrov, A. G. Kuz'menkov, N. A. Maleev, V. V. Andryushkin, V. E. Bugrov, A. G. Gladyshev, N. V. Kryzhanovskaya, K. O. Voropaev, I. O. Zhumaeva, V. M. Ustinov, A. Yu. Egorov, “High-speed vertically emitting lasers in the spectral range of 1550 nm, implemented in the framework of wafer sintering method”, Kvantovaya Elektronika, 52:10 (2022), 878–884  [Bull. Lebedev Physics Institute, 50:suppl. 2 (2023), S140–S147] |
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2021 |
| 2. |
S. A. Blokhin, A. V. Babichev, A. G. Gladyshev, L. Ya. Karachinsky, I. I. Novikov, A. A. Blokhin, M. A. Bobrov, N. A. Maleev, A. G. Kuz'menkov, A. M. Nadtochiy, V. N. Nevedomskiy, V. V. Andryushkin, S. S. Rochas, D. V. Denisov, K. O. Voropaev, I. O. Zhumaeva, V. M. Ustinov, A. Yu. Egorov, V. E. Bugrov, “Investigation of the characteristics of the InGaAs/InAlGaAs superlattice for 1300 nm range vertical-cavity surface emitting lasers”, Zhurnal Tekhnicheskoi Fiziki, 91:12 (2021), 2008–2017  |
| 3. |
N. V. Kryzhanovskaya, A. S. Dragunova, S. D. Komarov, A. M. Nadtochiy, A. G. Gladyshev, A. V. Babichev, A. V. Uvarov, V. V. Andryushkin, D. V. Denisov, E. S. Kolodeznyi, I. I. Novikov, L. Ya. Karachinsky, A. Yu. Egorov, “Optical properties of three-dimensional InGaP(As) islands formed by substitution of fifth-group elements”, Optics and Spectroscopy, 129:2 (2021), 218–222 ; Optics and Spectroscopy, 129:2 (2021), 256–260 |
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| 4. |
Yu. K. Bobretsova, D. A. Veselov, A. A. Klimov, K. V. Bakhvalov, V. V. Shamakhov, S. O. Slipchenko, V. V. Andryushkin, N. A. Pikhtin, “Optical absorption in a waveguide based on an n-type AlGaAs heterostructure”, Kvantovaya Elektronika, 51:11 (2021), 987–991 [Quantum Electron., 51:11 (2021), 987–991   ] |
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2020 |
| 5. |
A. G. Gladyshev, A. V. Babichev, V. V. Andryushkin, D. V. Denisov, V. N. Nevedomskiy, E. S. Kolodeznyi, I. I. Novikov, L. Ya. Karachinsky, A. Yu. Egorov, “Studying the optical and structural properties of three-dimensional InGaP(As) islands formed by substitution of elements of the fifth group”, Zhurnal Tekhnicheskoi Fiziki, 90:12 (2020), 2139–2142 ; Tech. Phys., 65:12 (2020), 2047–2050 |
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| 6. |
S. S. Rochas, I. I. Novikov, A. G. Gladyshev, E. S. Kolodeznyi, A. V. Babichev, V. V. Andryushkin, V. N. Nevedomskiy, D. V. Denisov, L. Ya. Karachinsky, A. Yu. Egorov, V. E. Bugrov, “The influence of the parameters of a short-period InGaAs/InGaAlAs superlattice on photoluminescence efficiency”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:22 (2020), 27–30 ; Tech. Phys. Lett., 46:11 (2020), 1128–1131 |
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2019 |
| 7. |
S. I. Goloudina, V. V. Luchinin, V. M. Pasyuta, A. N. Smirnov, D. A. Kirilenko, E. N. Sevostyanov, G. A. Konoplev, V. V. Andryushkin, V. P. Sklizkova, I. V. Gofman, V. M. Svetlichnyi, V. V. Kudryavtsev, “Formation of highly conductive and optically transparent multilayer graphene films by carbonization of polyimide Langmuir–Blodgett films”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:9 (2019), 50–54 ; Tech. Phys. Lett., 45:5 (2019), 471–474 |
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