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Publications in Math-Net.Ru |
Citations |
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2021 |
| 1. |
V. A. Shvets, D. V. Marin, M. V. Yakushev, S. V. Rykhlitskii, “Investigation of the temperature dependence of the spectra of optical constants of Hg$_{1-x}$Cd$_{x}$Te films grown using molecular beam epitaxy”, Optics and Spectroscopy, 129:1 (2021), 33–40   ; Optics and Spectroscopy, 129:1 (2021), 29–36 |
| 2. |
V. A. Shvets, D. V. Marin, I. A. Azarov, M. V. Yakushev, S. V. Rykhlitskii, “In situ ellipsometric monitoring of composition and temperature of HgCdTe layers during their growth”, Fizika i Tekhnika Poluprovodnikov, 55:12 (2021), 1240–1247 |
| 3. |
G. Yu. Sidorov, Yu. G. Sidorov, V. A. Shvets, V. S. Varavin, “Formation of acceptor centers in CdHgTe as a result of water and heat treatments”, Fizika i Tekhnika Poluprovodnikov, 55:4 (2021), 331–335 ; Semiconductors, 55:5 (2021), 461–465 |
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2020 |
| 4. |
V. A. Shvets, D. V. Marin, V. G. Remesnik, I. A. Azarov, M. V. Yakushev, S. V. Rykhlitskii, “Parametric model of the optical constant spectra of Hg$_{1-x}$Cd$_{x}$Te and determination of the compound composition”, Optics and Spectroscopy, 128:12 (2020), 1815–1820 ; Optics and Spectroscopy, 128:12 (2020), 1948–1953 |
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E. A. Emelyanov, A. G. Nastovjak, M. O. Petrushkov, M. Yu. Yesin, T. A. Gavrilova, M. A. Putyato, N. L. Shwartz, V. A. Shvets, A. V. Vasev, B. R. Semyagin, V. V. Preobrazhenskii, “A mask based on a Si epitaxial layer for the self-catalytic nanowire growth on GaAs (111)$B$ and GaAs (100) substrates”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:4 (2020), 11–14 ; Tech. Phys. Lett., 46:2 (2020), 161–164 |
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2019 |
| 6. |
V. A. Shvets, N. N. Mikhailov, D. G. Ikusov, I. N. Uzhakov, S. A. Dvoretskii, “Determination of the composition profile of HgTe/Cd$_{x}$Hg$_{1-x}$Te quantum wells by single wavelength ellipsometry”, Optics and Spectroscopy, 127:2 (2019), 318–324 ; Optics and Spectroscopy, 127:2 (2019), 340–346 |
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| 7. |
V. A. Shvets, I. A. Azarov, D. V. Marin, M. V. Yakushev, S. V. Rykhlitskii, “Ellipsometric method for measuring the CdTe buffer-layer temperature in the molecular-beam epitaxy of CdHgTe”, Fizika i Tekhnika Poluprovodnikov, 53:1 (2019), 137–142 ; Semiconductors, 53:1 (2019), 132–137 |
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