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Optics and Spectroscopy, 2019, Volume 127, Issue 2, Pages 318–324
DOI: https://doi.org/10.21883/OS.2019.08.48049.364-18
(Mi os650)
 

This article is cited in 22 scientific papers (total in 22 papers)

Nanophotonics

Determination of the composition profile of HgTe/Cd$_{x}$Hg$_{1-x}$Te quantum wells by single wavelength ellipsometry

V. A. Shvetsab, N. N. Mikhailovab, D. G. Ikusova, I. N. Uzhakova, S. A. Dvoretskiiac

a Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
b Novosibirsk State University
c Tomsk State University
Citations (22)
Abstract: An ellipsometric method for reconstruction of the composition profile throughout the thickness in thin mercury-cadmium-telluride nanostructures grown by MBE has been developed. The method is based on ellipsometric data, measured during structure growth and following solution of the inverse ellipsometric problem. For this, a replacement of a part of the inhomogeneous layer by a homogeneous substrate with specially chosen optical constants has been done. Numerical simulation showed the correctness of such replacement and the efficiency of the developed algorithm. Using this method, the active region of the heterostructure consisting of five HgTe quantum wells separated by wide-band CdHgTe spacers has been studied. Using the results of continuous measurements of ellipsometric parameters obtained in situ during structure growth, the composition profiles for all five sequentially grown quantum wells was determined. A high repeatability of the composition distribution through the thickness is shown.
Keywords: ellipsometric parameters, molecular beam epitaxy, compositional profile.
Funding agency Grant number
Russian Foundation for Basic Research 18-29-20053
Ministry of Science and Higher Education of the Russian Federation 0306-2016-0003
This study was supported in part by the Russian Foundation for Basic Research (project no. 18-29-20053) and state order no. 0306-2016-0003.
Received: 11.12.2018
Revised: 11.02.2019
Accepted: 22.03.2019
English version:
Optics and Spectroscopy, 2019, Volume 127, Issue 2, Pages 340–346
DOI: https://doi.org/10.1134/S0030400X19080253
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: V. A. Shvets, N. N. Mikhailov, D. G. Ikusov, I. N. Uzhakov, S. A. Dvoretskii, “Determination of the composition profile of HgTe/Cd$_{x}$Hg$_{1-x}$Te quantum wells by single wavelength ellipsometry”, Optics and Spectroscopy, 127:2 (2019), 318–324; Optics and Spectroscopy, 127:2 (2019), 340–346
Citation in format AMSBIB
\Bibitem{ShvMikIku19}
\by V.~A.~Shvets, N.~N.~Mikhailov, D.~G.~Ikusov, I.~N.~Uzhakov, S.~A.~Dvoretskii
\paper Determination of the composition profile of HgTe/Cd$_{x}$Hg$_{1-x}$Te quantum wells by single wavelength ellipsometry
\jour Optics and Spectroscopy
\yr 2019
\vol 127
\issue 2
\pages 318--324
\mathnet{http://mi.mathnet.ru/os650}
\crossref{https://doi.org/10.21883/OS.2019.08.48049.364-18}
\elib{https://elibrary.ru/item.asp?id=41131022}
\transl
\jour Optics and Spectroscopy
\yr 2019
\vol 127
\issue 2
\pages 340--346
\crossref{https://doi.org/10.1134/S0030400X19080253}
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  • This publication is cited in the following 22 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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