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Publications in Math-Net.Ru |
Citations |
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2019 |
| 1. |
N. I. Bochkareva, A. M. Ivanov, A. V. Klochkov, Yu. G. Shreter, “Current noise and efficiency droop of light-emitting diodes in defect-assisted carrier tunneling from an InGaN/GaN quantum well”, Fizika i Tekhnika Poluprovodnikov, 53:1 (2019), 104–110   ; Semiconductors, 53:1 (2019), 99–105 |
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2016 |
| 2. |
N. I. Bochkareva, A. M. Ivanov, A. V. Klochkov, V. A. Tarala, Yu. G. Shreter, “The effect of the transformation of point defects under Joule heating on efficiency of LEDs with InGaN/GaN quantum wells”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:22 (2016), 1–8 ; Tech. Phys. Lett., 42:11 (2016), 1099–1102 |
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1984 |
| 3. |
A. A. Bugaev, A. V. Klochkov, “Irreversible changes in $\mathrm{VO}_{2}$ films at picosecond laser radiation”, Fizika Tverdogo Tela, 26:11 (1984), 3487–3489 |
| 4. |
A. A. Bugaev, V. V. Gudyalis, A. V. Klochkov, “Picosecond spectroscopy of semiconductor metal transition in $\mathrm{VO}_{2}$ films”, Fizika Tverdogo Tela, 26:5 (1984), 1463–1467 |
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1983 |
| 5. |
A. A. Bugaev, V. V. Gudyalis, A. V. Klochkov, “Induced optical anisotropy of $\mathrm{VO}_{2}$ films during picosecond excitation”, Fizika Tverdogo Tela, 25:6 (1983), 1890–1892 |
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