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Publications in Math-Net.Ru |
Citations |
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2020 |
| 1. |
A. I. Mikhaylov, A. V. Afanasyev, V. A. Ilyin, V. V. Luchinin, S. A. Reshanov, A. Schöner, “High-power 4$H$-SiC mosfet with an epitaxial buried channel”, Fizika i Tekhnika Poluprovodnikov, 54:1 (2020), 79–84   ; Semiconductors, 54:1 (2020), 122–126 |
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| 2. |
D. D. Avrov, A. N. Gorlyak, A. O. Lebedev, V. V. Luchinin, A. V. Markov, A. V. Osipov, M. F. Panov, S. A. Kukushkin, “Comparative ellipsometric analysis of silicon carbide polytypes 4$H$, 15$R$, and 6$H$ produced by a modified Lely method in the same growth process”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:19 (2020), 28–31 ; Tech. Phys. Lett., 46:10 (2020), 968–971 |
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| 3. |
A. V. Osipov, A. S. Grashchenko, A. N. Gorlyak, A. O. Lebedev, V. V. Luchinin, A. V. Markov, M. F. Panov, S. A. Kukushkin, “Investigation of the hardness and Young's modulus in thin near-surface layers of silicon carbide from the Si- and C-faces by nanoindentation”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:15 (2020), 36–38 ; Tech. Phys. Lett., 46:8 (2020), 763–766 |
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2019 |
| 4. |
K. G. Gareev, V. V. Luchinin, E. N. Sevostyanov, I. O. Testov, O. A. Testov, “Frequency dependence of an electromagnetic absorption coefficient in magnetic fluid”, Zhurnal Tekhnicheskoi Fiziki, 89:6 (2019), 948–951 ; Tech. Phys., 64:6 (2019), 893–896 |
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| 5. |
S. I. Goloudina, V. V. Luchinin, V. M. Pasyuta, A. N. Smirnov, D. A. Kirilenko, E. N. Sevostyanov, G. A. Konoplev, V. V. Andryushkin, V. P. Sklizkova, I. V. Gofman, V. M. Svetlichnyi, V. V. Kudryavtsev, “Formation of highly conductive and optically transparent multilayer graphene films by carbonization of polyimide Langmuir–Blodgett films”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:9 (2019), 50–54 ; Tech. Phys. Lett., 45:5 (2019), 471–474 |
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2018 |
| 6. |
E. N. Muratova, V. A. Moshnikov, V. V. Luchinin, A. A. Bobkov, I. A. Vrublevsky, K. V. Chernyakova, E. I. Terukov, “Thermal-conductive boards based on aluminum with an Al$_{2}$O$_{3}$ nanostructured layer for products of power electronics”, Zhurnal Tekhnicheskoi Fiziki, 88:11 (2018), 1678–1680 ; Tech. Phys., 63:11 (2018), 1626–1628 |
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2017 |
| 7. |
V. V. Luchinin, M. F. Panov, A. A. Romanov, “Planarization of a surface of nanoporous silica–titania composition by atomic-molecular chemical assembly”, Zhurnal Tekhnicheskoi Fiziki, 87:5 (2017), 736–740 ; Tech. Phys., 62:5 (2017), 755–759 |
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2016 |
| 8. |
A. I. Mikhaylov, A. V. Afanasyev, V. A. Ilyin, V. V. Luchinin, S. A. Reshanov, A. Schöner, “Method for increasing the carrier mobility in the channel of the 4$H$-SiC MOSFET”, Fizika i Tekhnika Poluprovodnikov, 50:6 (2016), 839–842 ; Semiconductors, 50:6 (2016), 824–827 |
| 9. |
A. I. Mikhaylov, A. V. Afanasyev, V. A. Ilyin, V. V. Luchinin, T. Sledziewski, S. A. Reshanov, A. Schöner, M. Krieger, “Specific features of the current–voltage characteristics of SiO$_{2}$/4$H$-SiC MIS structures with phosphorus implanted into silicon carbide”, Fizika i Tekhnika Poluprovodnikov, 50:1 (2016), 103–105 ; Semiconductors, 50:1 (2016), 103–105 |
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1984 |
| 10. |
Yu. M. Tairov, A. A. Kal'nin, V. V. Luchinin, F. Noibert, “EVOLUTION REGULARITY OF CRYSTAL-STRUCTURES DURING THE SYNTHESIS OF
SUBSTANCES, CONTAINING A GREAT DEAL OF STRUCTURALLY STABLE CONDITIONS”, Zhurnal Tekhnicheskoi Fiziki, 54:7 (1984), 1388–1390 |
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