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Fizika i Tekhnika Poluprovodnikov, 2020, Volume 54, Issue 1, Pages 79–84
DOI: https://doi.org/10.21883/FTP.2020.01.48779.9253 (Mi phts5311) 		 
This article is cited in 5 scientific papers (total in 5 papers)

Semiconductor physics

High-power 4$H$-SiC mosfet with an epitaxial buried channel

A. I. Mikhaylova, A. V. Afanasyeva, V. A. Ilyina, V. V. Luchinina, S. A. Reshanovb, A. Schönerb

a Saint Petersburg Electrotechnical University "LETI"
b Ascatron AB, Kista, Sweden
Full-text PDF (391 kB) Citations (5)
DOI: https://doi.org/10.21883/FTP.2020.01.48779.9253
Abstract: A method for reducing the on-state resistance of a high-power 4$H$-SiC metal-oxide-semiconductor field-effect transistor (MOSFET) by forming a buried channel via the growth of epitaxial layers on the surface of the heavily doped $p$-region is proposed. The features of the carrier transport in the epitaxial buried channel are considered in comparison with that fabricated by conventional technology. A more than threefold decrease in the resistance of the high-power MOSFET is achieved.
Keywords: 4$H$-SiC, epitaxy, transistor channel, MOSFET.
Funding agency Grant number
Ministry of Education and Science of the Russian Federation 03.G25.31.0243
This study was supported by the Ministry of Education and Science of the Russian Federation, project no. 03.G25.31.0243.
Received: 04.09.2019
Revised: 16.09.2019
Accepted: 16.09.2019
English version:
Semiconductors, 2020, Volume 54, Issue 1, Pages 122–126
DOI: https://doi.org/10.1134/S1063782620010157
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. I. Mikhaylov, A. V. Afanasyev, V. A. Ilyin, V. V. Luchinin, S. A. Reshanov, A. Schöner, “High-power 4$H$-SiC mosfet with an epitaxial buried channel”, Fizika i Tekhnika Poluprovodnikov, 54:1 (2020), 79–84; Semiconductors, 54:1 (2020), 122–126
Citation in format AMSBIB
\Bibitem{MikAfaIly20}
\by A.~I.~Mikhaylov, A.~V.~Afanasyev, V.~A.~Ilyin, V.~V.~Luchinin, S.~A.~Reshanov, A.~Sch\"oner
\paper High-power 4$H$-SiC mosfet with an epitaxial buried channel
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2020
\vol 54
\issue 1
\pages 79--84
\mathnet{http://mi.mathnet.ru/phts5311}
\crossref{https://doi.org/10.21883/FTP.2020.01.48779.9253}
\elib{https://elibrary.ru/item.asp?id=42571075}
\transl
\jour Semiconductors
\yr 2020
\vol 54
\issue 1
\pages 122--126
\crossref{https://doi.org/10.1134/S1063782620010157}
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  • https://www.mathnet.ru/eng/phts/v54/i1/p79
    • This publication is cited in the following 5 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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