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Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 1, Pages 103–105
(Mi phts6569)
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This article is cited in 4 scientific papers (total in 4 papers)
Semiconductor physics
Specific features of the current–voltage characteristics of SiO$_{2}$/4$H$-SiC MIS structures with phosphorus implanted into silicon carbide
A. I. Mikhaylovab, A. V. Afanasyeva, V. A. Ilyina, V. V. Luchinina, T. Sledziewskic, S. A. Reshanovd, A. Schönerbd, M. Kriegerc a Saint Petersburg Electrotechnical University "LETI"
b Acreo Swedish ICT AB, Kista, Sweden
c Friedrich-Alexander University of Erlangen-Nürnberg, Erlangen, Germany
d Ascatron AB, Kista, Sweden
Abstract:
The effect of phosphorus implantation into a 4$H$-SiC epitaxial layer immediately before the thermal growth of a gate insulator in an atmosphere of dry oxygen on the reliability of the gate insulator is studied. It is found that, together with passivating surface states, the introduction of phosphorus ions leads to insignificant weakening of the dielectric breakdown field and to a decrease in the height of the energy barrier between silicon carbide and the insulator, which is due to the presence of phosphorus atoms at the
SiO$_{2}$/4$H$-SiC interface and in the bulk of silicon dioxide.
Received: 19.05.2015 Accepted: 03.06.2015
Citation:
A. I. Mikhaylov, A. V. Afanasyev, V. A. Ilyin, V. V. Luchinin, T. Sledziewski, S. A. Reshanov, A. Schöner, M. Krieger, “Specific features of the current–voltage characteristics of SiO$_{2}$/4$H$-SiC MIS structures with phosphorus implanted into silicon carbide”, Fizika i Tekhnika Poluprovodnikov, 50:1 (2016), 103–105; Semiconductors, 50:1 (2016), 103–105
Linking options:
https://www.mathnet.ru/eng/phts6569 https://www.mathnet.ru/eng/phts/v50/i1/p103
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Abstract page: | 46 | Full-text PDF : | 17 |
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