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Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 1, Pages 103–105 (Mi phts6569)  

This article is cited in 4 scientific papers (total in 4 papers)

Semiconductor physics

Specific features of the current–voltage characteristics of SiO$_{2}$/4$H$-SiC MIS structures with phosphorus implanted into silicon carbide

A. I. Mikhaylovab, A. V. Afanasyeva, V. A. Ilyina, V. V. Luchinina, T. Sledziewskic, S. A. Reshanovd, A. Schönerbd, M. Kriegerc

a Saint Petersburg Electrotechnical University "LETI"
b Acreo Swedish ICT AB, Kista, Sweden
c Friedrich-Alexander University of Erlangen-Nürnberg, Erlangen, Germany
d Ascatron AB, Kista, Sweden
Full-text PDF (156 kB) Citations (4)
Abstract: The effect of phosphorus implantation into a 4$H$-SiC epitaxial layer immediately before the thermal growth of a gate insulator in an atmosphere of dry oxygen on the reliability of the gate insulator is studied. It is found that, together with passivating surface states, the introduction of phosphorus ions leads to insignificant weakening of the dielectric breakdown field and to a decrease in the height of the energy barrier between silicon carbide and the insulator, which is due to the presence of phosphorus atoms at the SiO$_{2}$/4$H$-SiC interface and in the bulk of silicon dioxide.
Received: 19.05.2015
Accepted: 03.06.2015
English version:
Semiconductors, 2016, Volume 50, Issue 1, Pages 103–105
DOI: https://doi.org/10.1134/S1063782616010152
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. I. Mikhaylov, A. V. Afanasyev, V. A. Ilyin, V. V. Luchinin, T. Sledziewski, S. A. Reshanov, A. Schöner, M. Krieger, “Specific features of the current–voltage characteristics of SiO$_{2}$/4$H$-SiC MIS structures with phosphorus implanted into silicon carbide”, Fizika i Tekhnika Poluprovodnikov, 50:1 (2016), 103–105; Semiconductors, 50:1 (2016), 103–105
Citation in format AMSBIB
\Bibitem{MikAfaIly16}
\by A.~I.~Mikhaylov, A.~V.~Afanasyev, V.~A.~Ilyin, V.~V.~Luchinin, T.~Sledziewski, S.~A.~Reshanov, A.~Sch\"oner, M.~Krieger
\paper Specific features of the current–voltage characteristics of SiO$_{2}$/4$H$-SiC MIS structures with phosphorus implanted into silicon carbide
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2016
\vol 50
\issue 1
\pages 103--105
\mathnet{http://mi.mathnet.ru/phts6569}
\elib{https://elibrary.ru/item.asp?id=25668044}
\transl
\jour Semiconductors
\yr 2016
\vol 50
\issue 1
\pages 103--105
\crossref{https://doi.org/10.1134/S1063782616010152}
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  • https://www.mathnet.ru/eng/phts6569
  • https://www.mathnet.ru/eng/phts/v50/i1/p103
  • This publication is cited in the following 4 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
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