|
|
|
Publications in Math-Net.Ru |
Citations |
|
2019 |
| 1. |
E. N. Mokhov, A. A. Vol'fson, O. P. Kazarova, “Growing bulk aluminum nitride and gallium nitride crystals by the sublimation sandwich method”, Fizika Tverdogo Tela, 61:12 (2019), 2298–2302   ; Phys. Solid State, 61:12 (2019), 2286–2290 |
1
|
| 2. |
I. D. Breev, A. N. Anisimov, A. A. Vol'fson, O. P. Kazarova, E. N. Mokhov, “Raman scattering in AlN crystals grown by sublimation on SiC è AlN seeds”, Fizika i Tekhnika Poluprovodnikov, 53:11 (2019), 1593–1596 ; Semiconductors, 53:11 (2019), 1558–1561 |
11
|
|
2018 |
| 3. |
A. N. Anisimov, A. A. Vol'fson, E. N. Mokhov, “Raman spectra of thick epitaxial GaN layers formed on SiC by the sublimation sandwich method”, Fizika i Tekhnika Poluprovodnikov, 52:9 (2018), 1104–1106 ; Semiconductors, 52:9 (2018), 1225–1227 |
2
|
|
1992 |
| 4. |
Yu. A. Vodakov, A. A. Vol'fson, G. V. Zaritskii, E. N. Mokhov, A. G. Ostroumov, A. D. Roenkov, V. V. Semenov, V. I. Sokolov, V. A. Syralev, V. E. Udaltsov, “Ýôôåêòèâíûå çåëåíûå ñâåòîäèîäû íà êàðáèäå êðåìíèÿ”, Fizika i Tekhnika Poluprovodnikov, 26:1 (1992), 107–110 |
|
1989 |
| 5. |
V. I. Sankin, A. V. Naumov, A. A. Vol'fson, M. G. Ramm, L. M. Smerklo, A. V. Suvorov, “SIC(SC)-BASED INJECTION-TRANSIT STRUCTURE”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:24 (1989), 43–46 |
|
1987 |
| 6. |
Yu. A. Vodakov, A. A. Vol'fson, A. A. Mal'tsev, “CATHODE AMPLIFICATION IN P-N TRANSITIONS ON SILICON-CARBIDE”, Zhurnal Tekhnicheskoi Fiziki, 57:12 (1987), 2405–2407 |
| 7. |
E. N. Mokhov, M. G. Ramm, A. D. Roenkov, A. A. Vol'fson, A. S. Tregubova, I. L. Shul'pina, “Origination of structural ruptures in epitaxial layers of silicon-carbide”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:11 (1987), 641–645 |
|
1986 |
| 8. |
R. G. Verechikova, Yu. A. Vodakov, A. A. Vol'fson, A. A. Mal'tsev, “Cathodoamplification in Schottky barriers on silicon-carbide”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:23 (1986), 1464–1468 |
| |
|
|
Contact us: