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Publications in Math-Net.Ru |
Citations |
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2021 |
| 1. |
R. J. S. Abraham, V. B. Shuman, L. M. Portsel, A. N. Lodygin, Yu. A. Astrov, N. V. Abrosimov, S. G. Pavlov, H.-W. Hübers, S. Simmons, M. L. W. Thewalt, “Thermal activation of valley-orbit states of neutral magnesium in silicon”, Fizika i Tekhnika Poluprovodnikov, 55:6 (2021), 500  |
| 2. |
Yu. A. Astrov, L. M. Portsel', V. B. Shuman, A. N. Lodygin, N. V. Abrosimov, S. G. Pavlov, H.-W. Hübers, “Optical cross sections and oscillation strengths of magnesium double donor in silicon”, Fizika i Tekhnika Poluprovodnikov, 55:4 (2021), 299–303  |
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2020 |
| 3. |
L. M. Portsel', V. B. Shuman, A. A. Lavrent'ev, A. N. Lodygin, N. V. Abrosimov, Yu. A. Astrov, “Investigation of the magnesium impurity in silicon”, Fizika i Tekhnika Poluprovodnikov, 54:4 (2020), 321–326 ; Semiconductors, 54:4 (2020), 393–398 |
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2019 |
| 4. |
V. N. Shastin, R. Kh. Zhukavin, K. A. Kovalevsky, V. V. Tsyplenkov, V. V. Rumyantsev, D. V. Shengurov, S. G. Pavlov, V. B. Shuman, L. M. Portsel', A. N. Lodygin, Yu. A. Astrov, N. V. Abrosimov, J. M. Klopf, H.-W. Hübers, “Chemical shift and exchange interaction energy of the $1s$ states of magnesium donors in silicon. The possibility of stimulated emission”, Fizika i Tekhnika Poluprovodnikov, 53:9 (2019), 1263–1266 ; Semiconductors, 53:9 (2019), 1234–1237 |
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| 5. |
N. A. Yarykin, V. B. Shuman, L. M. Portsel', A. N. Lodygin, Yu. A. Astrov, N. V. Abrosimov, J. Weber, “DLTS investigation of the energy spectrum of Si : Mg crystals”, Fizika i Tekhnika Poluprovodnikov, 53:6 (2019), 799–804 ; Semiconductors, 53:6 (2019), 789–794 |
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| 6. |
V. B. Shuman, A. N. Lodygin, L. M. Portsel', A. A. Yakovleva, N. V. Abrosimov, Yu. A. Astrov, “Decomposition of a solid solution of interstitial magnesium in silicon”, Fizika i Tekhnika Poluprovodnikov, 53:3 (2019), 314–316 ; Semiconductors, 53:3 (2019), 296–297 |
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2017 |
| 7. |
V. B. Shuman, Yu. A. Astrov, A. N. Lodygin, L. M. Portsel', “High-temperature diffusion of magnesium in dislocation-free silicon”, Fizika i Tekhnika Poluprovodnikov, 51:8 (2017), 1075–1077 ; Semiconductors, 51:8 (2017), 1031–1033 |
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| 8. |
T. T. Мnatsakanov, M. E. Levinshteĭn, V. B. Shuman, B. M. Seredin, “On the limit of the injection ability of silicon $p^{+}$–$n$ junctions as a result of fundamental physical effects”, Fizika i Tekhnika Poluprovodnikov, 51:6 (2017), 830–834 ; Semiconductors, 51:6 (2017), 798–802 |
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| 9. |
V. B. Shuman, A. A. Lavrent'ev, Yu. A. Astrov, A. N. Lodygin, L. M. Portsel', “Diffusion of interstitial magnesium in dislocation-free silicon”, Fizika i Tekhnika Poluprovodnikov, 51:1 (2017), 5–7 ; Semiconductors, 51:1 (2017), 1–3 |
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1989 |
| 10. |
A. S. Zubrilov, O. A. Kotin, V. B. Shuman, “Однородный лавинный пробой в кремниевых диодах”, Fizika i Tekhnika Poluprovodnikov, 23:4 (1989), 607–611 |
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1987 |
| 11. |
A. S. Zubrilov, V. B. Shuman, “AVALANCHE BREAKDOWN UNDER HIGH-CURRENT DENSITIES”, Zhurnal Tekhnicheskoi Fiziki, 57:9 (1987), 1843–1845 |
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1986 |
| 12. |
A. S. Zubrilov, V. A. Kuz'min, T. T. Мnatsakanov, L. I. Pomortseva, V. B. Shuman, “Effect of Radiation-Induced Defects on Current-Voltage Characteristic of Silicon Multilayer Structures”, Fizika i Tekhnika Poluprovodnikov, 20:3 (1986), 532–534 |
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1985 |
| 13. |
E. G. Guk, A. V. El'tsov, S. F. Luizova, V. B. Shuman, T. A. Yurre, “Some technological aspects of sulfur diffusion in silicon”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:4 (1985), 227–229 |
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1984 |
| 14. |
V. B. Shuman, “INCREASING OF THE DIODE HIGH-SPEED RESPONSE”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 10:23 (1984), 1424–1426 |
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1983 |
| 15. |
A. S. Zubrilov, V. A. Kuz'min, T. T. Мnatsakanov, L. I. Pomortseva, V. B. Shuman, “Исследование влияния оже-рекомбинации на вольтамперную характеристику
кремниевых многослойных структур”, Fizika i Tekhnika Poluprovodnikov, 17:3 (1983), 474–478 |
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