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This article is cited in 2 scientific papers (total in 2 papers)
Semiconductor physics
On the limit of the injection ability of silicon $p^{+}$–$n$ junctions as a result of fundamental physical effects
T. T. Ìnatsakanova, M. E. Levinshteĭnb, V. B. Shumanb, B. M. Seredinc a Russian Electrotechnical Institute Named after V. I. Lenin, Moscow, Russia
b Ioffe Institute, St. Petersburg
c South-Russian State Polytechnic University named M. I. Platov, Novocherkassk, Russia
Abstract:
Analytical expressions describing the dependences of the $p^{+}$–$n$–junction leakage current on the doping level of the $p^{+}$-type region are derived by taking into account a whole set of nonlinear physical effects: electron–hole scattering, Auger recombination, band-gap narrowing, and nonlinear dependences of the charge-carrier lifetime and mobility on the doping level. It is shown that the dependence for the leakage current has a minimum at which the injection ability of the $p^{+}$-type emitter is at a maximum. The dependence of the extremum position on the main parameters of the heavily doped $p^{+}$ layer is analyzed. The data obtained make it possible to optimize the structure of high-power silicon devices and to facilitate the adequacy of numerical calculations.
Received: 08.09.2016 Accepted: 30.11.2016
Citation:
T. T. Ìnatsakanov, M. E. Levinshteǐn, V. B. Shuman, B. M. Seredin, “On the limit of the injection ability of silicon $p^{+}$–$n$ junctions as a result of fundamental physical effects”, Fizika i Tekhnika Poluprovodnikov, 51:6 (2017), 830–834; Semiconductors, 51:6 (2017), 798–802
Linking options:
https://www.mathnet.ru/eng/phts6142 https://www.mathnet.ru/eng/phts/v51/i6/p830
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