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This article is cited in 11 scientific papers (total in 11 papers)
Non-electronic properties of semiconductors (atomic structure, diffusion)
High-temperature diffusion of magnesium in dislocation-free silicon
V. B. Shuman, Yu. A. Astrov, A. N. Lodygin, L. M. Portsel' Ioffe Institute, St. Petersburg
Abstract:
The diffusion doping of dislocation-free single-crystal silicon with magnesium is studied in the temperature range 1000–1200$^\circ$C. The conventional sandwich method is used as the doping method. It is found that the diffusion coefficient of magnesium is described by a universal Arrhenius curve in the extended temperature range 600–1200$^\circ$C, with data earlier obtained for the range 600–800$^\circ$C taken into consideration. The relatively low activation energy of diffusion transport (1.83 eV) is indicative of the interstitial mechanism of impurity diffusion.
Received: 31.01.2017 Accepted: 15.02.2017
Citation:
V. B. Shuman, Yu. A. Astrov, A. N. Lodygin, L. M. Portsel', “High-temperature diffusion of magnesium in dislocation-free silicon”, Fizika i Tekhnika Poluprovodnikov, 51:8 (2017), 1075–1077; Semiconductors, 51:8 (2017), 1031–1033
Linking options:
https://www.mathnet.ru/eng/phts6072 https://www.mathnet.ru/eng/phts/v51/i8/p1075
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