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Publications in Math-Net.Ru |
Citations |
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2021 |
| 1. |
V. A. Shutaev, E. A. Grebenshchikova, V. G. Sidorov, Yu. P. Yakovlev, “Current generation in Pd/InP structures in hydrogen medium”, Fizika i Tekhnika Poluprovodnikov, 55:12 (2021), 1236–1239   |
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2020 |
| 2. |
V. A. Shutaev, E. A. Grebenshchikova, V. G. Sidorov, Yu. P. Yakovlev, “Hydrogen influence on the optical transparency of palladium layers”, Optics and Spectroscopy, 128:5 (2020), 603–606 ; Optics and Spectroscopy, 128:5 (2020), 596–599 |
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| 3. |
V. A. Shutaev, E. A. Grebenshchikova, V. G. Sidorov, M. E. Kompan, Yu. P. Yakovlev, “Influence of hydrogen on the impedance of Pd/oxide/InP structures”, Fizika i Tekhnika Poluprovodnikov, 54:6 (2020), 547–551 ; Semiconductors, 54:6 (2020), 658–661 |
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2019 |
| 4. |
V. A. Shutaev, V. G. Sidorov, E. A. Grebenshchikova, L. K. Vlasov, A. A. Pivovarova, Yu. P. Yakovlev, “Influence of hydrogen on the electrical properties of Pd/InP structures”, Fizika i Tekhnika Poluprovodnikov, 53:10 (2019), 1427–1430 ; Semiconductors, 53:10 (2019), 1389–1392 |
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| 5. |
E. A. Grebenshchikova, V. G. Sidorov, V. A. Shutaev, Yu. P. Yakovlev, “Effect of the hydrogen concentration on the Pd/$n$-InP Schottky diode photocurrent”, Fizika i Tekhnika Poluprovodnikov, 53:2 (2019), 246–248 ; Semiconductors, 53:2 (2019), 234–236 |
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2018 |
| 6. |
E. A. Grebenshchikova, Kh. M. Salikhov, V. G. Sidorov, V. A. Shutaev, Yu. P. Yakovlev, “Determining the hydrogen concentration from the photovoltage of Pd–oxide–InP MIS structures”, Fizika i Tekhnika Poluprovodnikov, 52:10 (2018), 1183–1186 ; Semiconductors, 52:10 (2018), 1303–1306 |
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2016 |
| 7. |
V. N. Petrov, V. G. Sidorov, N. A. Talnishnikh, A. E. Chernyakov, E. I. Shabunina, N. M. Shmidt, A. S. Usikov, H. Helava, Yu. N. Makarov, “On the fractal nature of light-emitting structures based on III–N nanomaterials and related phenomena”, Fizika i Tekhnika Poluprovodnikov, 50:9 (2016), 1195–1201 ; Semiconductors, 50:9 (2016), 1173–1179 |
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1988 |
| 8. |
V. L. Korolev, V. G. Sidorov, “Сравнительное исследование люминесценции GaAs(Si) при фото-
и электровозбуждении”, Fizika i Tekhnika Poluprovodnikov, 22:10 (1988), 1827–1830 |
| 9. |
V. L. Korolev, V. G. Sidorov, “Механизмы излучательной рекомбинации в сильно легированном
компенсированном арсениде галлия”, Fizika i Tekhnika Poluprovodnikov, 22:8 (1988), 1359–1364 |
| 10. |
V. L. Korolev, V. V. Rossin, V. G. Sidorov, “Внешний квантовый выход светодиодов из GaAs$\langle\text{Si}\rangle$”, Fizika i Tekhnika Poluprovodnikov, 22:3 (1988), 532–534 |
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1986 |
| 11. |
V. V. Evstropov, N. M. Stus, N. Smirnova, G. M. Filaretova, L. M. Fedorov, V. G. Sidorov, “Nonclassical Thermoinjection Current in InAsSbP/lnAs $p{-}n$ Structures”, Fizika i Tekhnika Poluprovodnikov, 20:4 (1986), 762–765 |
| 12. |
A. G. Drizhuk, V. G. Sidorov, “On the Nature of Unipolar Excitation of Polarized Electroluminescence in GaN(Zn, O)”, Fizika i Tekhnika Poluprovodnikov, 20:1 (1986), 144–146 |
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1985 |
| 13. |
V. L. Korolev, V. V. Rossin, V. G. Sidorov, Yu. K. Shalabutov, “Efficiency of Luminescence in Compensated
Gallium Arsenide”, Fizika i Tekhnika Poluprovodnikov, 19:5 (1985), 934–936 |
| 14. |
V. L. Korolev, V. V. Rossin, V. G. Sidorov, Yu. K. Shalabutov, “On the Role of Density-of-States Tails in the Formation of Photoluminescence and Electroluminescence Spectra of GaAs$\langle$Si$\rangle$”, Fizika i Tekhnika Poluprovodnikov, 19:3 (1985), 525–527 |
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1984 |
| 15. |
A. T. Gorelenok, V. G. Gruzdov, V. V. Evstropov, V. G. Sidorov, I. S. Tarasov, L. M. Fedorov, “Обратные токи в $p{-}n$-гетероструктурах
InGaAsP/InP”, Fizika i Tekhnika Poluprovodnikov, 18:11 (1984), 2036–2040 |
| 16. |
A. A. Grinson, V. B. Shikin, V. A. Kasatkin, V. G. Sidorov, S. N. Shlikhtov, “Влияние иттербия на образование радиационных дефектов
в $p{-}n$-структурах из фосфида галлия”, Fizika i Tekhnika Poluprovodnikov, 18:10 (1984), 1890–1892 |
| 17. |
V. G. Sidorov, S. N. Shlikhtov, Yu. K. Shalabutov, “Влияние электрического поля на захват электронов глубоким донорным
центром кислорода в фосфиде галлия”, Fizika i Tekhnika Poluprovodnikov, 18:10 (1984), 1868–1870 |
| 18. |
A. T. Gorelenok, V. G. Gruzdov, V. V. Evstropov, V. G. Sidorov, I. S. Tarasov, L. M. Fedorov, “Влияние несоответствия параметров решеток на
$I{-}V$-характеристики InGaAsP/InP $p{-}n$-гетероструктур”, Fizika i Tekhnika Poluprovodnikov, 18:8 (1984), 1413–1416 |
| 19. |
V. V. Rossin, V. G. Sidorov, “Influence of the Effect of Superradiation on Nonstationar Photoeffect”, Fizika i Tekhnika Poluprovodnikov, 18:6 (1984), 1124–1126 |
| 20. |
A. T. Gorelenok, V. G. Gruzdov, V. V. Evstropov, V. G. Sidorov, I. S. Tarasov, L. M. Fedorov, “Tunnel-Type Currents in InGaAsP/InP $p{-}n$ Heterostructures”, Fizika i Tekhnika Poluprovodnikov, 18:6 (1984), 1034–1038 |
| 21. |
V. L. Korolev, V. V. Rossin, V. G. Sidorov, “Study of Radiative-Recombination Efficiency of GaAs<Si> Structures”, Fizika i Tekhnika Poluprovodnikov, 18:4 (1984), 635–638 |
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1983 |
| 22. |
V. B. Shikin, D. A. Dmitrieva, V. G. Sidorov, E. A. Tvirova, Yu. K. Shalabutov, S. N. Shlikhtov, “Параметры центра, ответственного за долговременную релаксацию емкости
в светодиодах GaP$\langle\text{Zn,\,O}\rangle$”, Fizika i Tekhnika Poluprovodnikov, 17:11 (1983), 2046–2049 |
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