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This article is cited in 7 scientific papers (total in 7 papers)
Semiconductor physics
Effect of the hydrogen concentration on the Pd/$n$-InP Schottky diode photocurrent
E. A. Grebenshchikovaa, V. G. Sidorovb, V. A. Shutaeva, Yu. P. Yakovleva a Ioffe Institute, St. Petersburg
b IBSG Co., Ltd., St.Petersburg
Abstract:
The variation rate of the short-circuit photocurrent of Pd/$n$-InP Schottky diodes is studied as a function of the presence of hydrogen in a gas mixture with H$_2$ concentrations of 1–100 vol %. It is shown that upon the simultaneous exposure of the Schottky diode to a hydrogen-containing gas mixture and to light ($\lambda$ = 0.9 $\mu$m), the hydrogen concentration in the gas mixture and the Pd/$n$-InP diode photocurrent variation rate are related exponentially. The Schottky-diode response rate to the presence of hydrogen in the gas mixture increases with the illumination intensity.
Received: 01.08.2018 Revised: 13.08.2018
Citation:
E. A. Grebenshchikova, V. G. Sidorov, V. A. Shutaev, Yu. P. Yakovlev, “Effect of the hydrogen concentration on the Pd/$n$-InP Schottky diode photocurrent”, Fizika i Tekhnika Poluprovodnikov, 53:2 (2019), 246–248; Semiconductors, 53:2 (2019), 234–236
Linking options:
https://www.mathnet.ru/eng/phts5595 https://www.mathnet.ru/eng/phts/v53/i2/p246
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