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Publications in Math-Net.Ru |
Citations |
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2016 |
| 1. |
E. V. Maraeva, V. A. Moshnikov, A. A. Petrov, Yu. M. Tairov, “Oxidation model of polycrystalline lead-chalcogenide layers in an iodine-containing medium”, Fizika i Tekhnika Poluprovodnikov, 50:6 (2016), 791–793   ; Semiconductors, 50:6 (2016), 775–777 |
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| 2. |
D. D. Avrov, A. O. Lebedev, Yu. M. Tairov, “Polytype inclusions and polytype stability in silicon-carbide crystals”, Fizika i Tekhnika Poluprovodnikov, 50:4 (2016), 501–508 ; Semiconductors, 50:4 (2016), 494–501 |
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1991 |
| 3. |
G. K. Safaraliev, Yu. M. Tairov, V. F. Cvetkov, “Широкозонные твердые растворы (SiC)$_{1-x}$(AlN)$_{x}$”, Fizika i Tekhnika Poluprovodnikov, 25:8 (1991), 1437–1447 |
| 4. |
G. K. Safaraliev, Yu. M. Tairov, V. F. Cvetkov, S. S. Shabanov, “STUDY OF SOLUBILITY AND DIFFUSION IN SIC-NBC, SIC-TIC, SIC-ZRC SYSTEMS”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 17:23 (1991), 80–83 |
| 5. |
A. A. Andreev, P. A. Andreev, M. Kh. Ganiev, Yu. M. Tairov, D. Khanov, V. F. Cvetkov, S. V. Chernyshov, “Получение аморфных гидрогенизированных широкозонных полупроводников
$a$-Si$_{1-x}$C$_{x}$ : H
в реакторе с вынесенной подложкой”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 17:16 (1991), 46–49 |
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1990 |
| 6. |
A. P. Andreev, E. E. Violin, V. I. Levin, Yu. M. Tairov, V. F. Cvetkov, I. E. Yaremenko, “Влияние отклонения от стехиометрии на свойства диффузионных
$p{-}n$-переходов на основе карбида кремния”, Fizika i Tekhnika Poluprovodnikov, 24:5 (1990), 821–824 |
| 7. |
I. I. Parfenova, Yu. M. Tairov, V. F. Cvetkov, “Теплопроводность карбида кремния в области температур 300$-$3000 K”, Fizika i Tekhnika Poluprovodnikov, 24:2 (1990), 258–263 |
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1989 |
| 8. |
D. R. Moskvina, J. Petzoldt, E. N. Potapov, Yu. M. Tairov, “Политипный фазовый переход, индуцированный ионной имплантацией”, Fizika i Tekhnika Poluprovodnikov, 23:12 (1989), 2240–2243 |
| 9. |
Sh. A. Nurmagomedov, A. N. Pikhtin, V. N. Razbegaev, G. K. Safaraliev, Yu. M. Tairov, V. F. Cvetkov, “Оптическое поглощение и люминесценция твердых растворов
(SiC)$_{1-x}$(AlN)$_{x}$”, Fizika i Tekhnika Poluprovodnikov, 23:1 (1989), 162–164 |
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1988 |
| 10. |
M. M. Anikin, A. A. Lebedev, I. V. Popov, V. P. Rastegaev, A. M. Strel'chuk, A. L. Syrkin, Yu. M. Tairov, V. F. Cvetkov, V. E. Chelnokov, “Электрические характеристики эпитаксиальных
$p^{+}{-}n{-}n^{+}$-структур на основе карбида кремния политипа $6H$”, Fizika i Tekhnika Poluprovodnikov, 22:2 (1988), 298–300 |
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1987 |
| 11. |
A. A. Kal'nin, I. Petsol'dt, Yu. M. Tairov, “Experimental observation of thermomechanically induced nonequillibrium phase transitions in $\mathrm{SiC}$”, Fizika Tverdogo Tela, 29:2 (1987), 575–577 |
| 12. |
I. S. Gorban, A. P. Krokhmal, V. I. Levin, A. S. Skirda, Yu. M. Tairov, V. F. Cvetkov, “Impurity Optical Absorption and Energy Structure of Donor $1s$ States in $4H$-SiC”, Fizika i Tekhnika Poluprovodnikov, 21:1 (1987), 194–197 |
| 13. |
V. A. Dmitriev, P. A. Ivanov, V. I. Levin, I. V. Popov, A. M. Strel'chuk, Yu. M. Tairov, V. F. Cvetkov, V. E. Chelnokov, “Formation of $Si\,C$ epitaxial R-P-structures of sublayers, obtained from volume $Si\,C$ crystals”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:19 (1987), 1168–1171 |
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1986 |
| 14. |
V. S. Vainer, V. A. Ilin, V. A. Karachinov, Yu. M. Tairov, “Electron paramagnetic res of $(\mathrm{TiN})^{0}$ impurity pairs in $\mathrm{6H}$ polytype of $\mathrm{SiC}$”, Fizika Tverdogo Tela, 28:2 (1986), 363–368 |
| 15. |
Sh. A. Nurmagomedov, A. N. Pikhtin, V. N. Razbegaev, G. K. Safaraliev, Yu. M. Tairov, V. F. Cvetkov, “Production and investigation of epitaxial layers of wide-range solid $(Si\,C)_{1-x}(Al\,N)_{x}$ solutions”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:17 (1986), 1043–1045 |
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1985 |
| 16. |
V. A. Ilin, V. A. Karachinov, Yu. M. Tairov, V. F. Cvetkov, “Simplification of $\mathrm{6H}$–$Si\,C$ crystal-lattice during alloying by isovalent admixtures”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:12 (1985), 749–752 |
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1984 |
| 17. |
È. E. Violin, K. D. Demakov, A. A. Kal'nin, F. Noibert, E. N. Potapov, Yu. M. Tairov, “$\mathrm{SiC}$ layer structure reduction after ion implantation”, Fizika Tverdogo Tela, 26:5 (1984), 1575–1577 |
| 18. |
Yu. M. Tairov, A. A. Kal'nin, V. V. Luchinin, F. Noibert, “EVOLUTION REGULARITY OF CRYSTAL-STRUCTURES DURING THE SYNTHESIS OF
SUBSTANCES, CONTAINING A GREAT DEAL OF STRUCTURALLY STABLE CONDITIONS”, Zhurnal Tekhnicheskoi Fiziki, 54:7 (1984), 1388–1390 |
| 19. |
V. I. Levin, Yu. M. Tairov, V. F. Cvetkov, “Luminescence of Silicon Carbide Due to Deviations from Stoichiometry”, Fizika i Tekhnika Poluprovodnikov, 18:7 (1984), 1194–1198 |
| 20. |
E. E. Violin, E. A. Gorin, E. N. Potapov, Yu. M. Tairov, “PROPERTIES OF P-LAYERS OF THE ION-ALLOYED SILICON-CARBIDE, FORMED BY THE
LASER-EMISSION”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 10:24 (1984), 1527–1529 |
| 21. |
V. V. Luchinin, Yu. M. Tairov, “HETEROEPITAXIAL COMPOSITION - UNUSUAL POLYTYPE OF H-2 SILICON-CARBIDE ON
ISOLATED SUBSTRATES - ALUMINUM-SAPPHIRE NITRIDE”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 10:14 (1984), 873–876 |
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1983 |
| 22. |
G. Sukhanek, Yu. M. Tairov, V. F. Cvetkov, “Оценка важнейших электрофизических параметров твердых растворов карбид
кремния-нитриды A$^{\text{III}}$B$^{\text{V}}$”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 9:12 (1983), 737–741 |
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