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Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 4, Pages 501–508
(Mi phts6493)
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This article is cited in 11 scientific papers (total in 11 papers)
Micro- and nanocrystalline, porous, composite semiconductors
Polytype inclusions and polytype stability in silicon-carbide crystals
D. D. Avrova, A. O. Lebedevb, Yu. M. Tairova a Saint Petersburg Electrotechnical University "LETI"
b Ioffe Institute, St. Petersburg
Abstract:
On the basis of both published data and our own experimental data we consider the main aspects of the problem related to ensuring polytype stability for ingots of grown 4H and 6H silicon-carbide compounds.
Keywords:
Silicon Carbide, Elementary Step, Polytype Structure, Hexagonal Polytype, Ingot Growth.
Received: 15.10.2015 Accepted: 19.10.2015
Citation:
D. D. Avrov, A. O. Lebedev, Yu. M. Tairov, “Polytype inclusions and polytype stability in silicon-carbide crystals”, Fizika i Tekhnika Poluprovodnikov, 50:4 (2016), 501–508; Semiconductors, 50:4 (2016), 494–501
Linking options:
https://www.mathnet.ru/eng/phts6493 https://www.mathnet.ru/eng/phts/v50/i4/p501
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Abstract page: | 37 | Full-text PDF : | 30 |
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