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Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 4, Pages 501–508 (Mi phts6493)  
This article is cited in 11 scientific papers (total in 11 papers)

Micro- and nanocrystalline, porous, composite semiconductors

Polytype inclusions and polytype stability in silicon-carbide crystals

D. D. Avrova, A. O. Lebedevb, Yu. M. Tairova

a Saint Petersburg Electrotechnical University "LETI"
b Ioffe Institute, St. Petersburg
Full-text PDF (611 kB) Citations (11)
Abstract: On the basis of both published data and our own experimental data we consider the main aspects of the problem related to ensuring polytype stability for ingots of grown 4H and 6H silicon-carbide compounds.
Keywords: Silicon Carbide, Elementary Step, Polytype Structure, Hexagonal Polytype, Ingot Growth.
Received: 15.10.2015
Accepted: 19.10.2015
English version:
Semiconductors, 2016, Volume 50, Issue 4, Pages 494–501
DOI: https://doi.org/10.1134/S1063782616040059
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: D. D. Avrov, A. O. Lebedev, Yu. M. Tairov, “Polytype inclusions and polytype stability in silicon-carbide crystals”, Fizika i Tekhnika Poluprovodnikov, 50:4 (2016), 501–508; Semiconductors, 50:4 (2016), 494–501
Citation in format AMSBIB
\Bibitem{AvrLebTai16}
\by D.~D.~Avrov, A.~O.~Lebedev, Yu.~M.~Tairov
\paper Polytype inclusions and polytype stability in silicon-carbide crystals
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2016
\vol 50
\issue 4
\pages 501--508
\mathnet{http://mi.mathnet.ru/phts6493}
\elib{https://elibrary.ru/item.asp?id=25668260}
\transl
\jour Semiconductors
\yr 2016
\vol 50
\issue 4
\pages 494--501
\crossref{https://doi.org/10.1134/S1063782616040059}
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  • https://www.mathnet.ru/eng/phts/v50/i4/p501
    • This publication is cited in the following 11 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    		Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
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