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Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 6, Pages 791–793
(Mi phts6440)
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This article is cited in 3 scientific papers (total in 3 papers)
Semiconductor structures, low-dimensional systems, quantum phenomena
Oxidation model of polycrystalline lead-chalcogenide layers in an iodine-containing medium
E. V. Maraeva, V. A. Moshnikov, A. A. Petrov, Yu. M. Tairov Saint Petersburg Electrotechnical University "LETI"
Abstract:
Model concepts of control over the formation of oxide shells in the course of oxidation are confirmed on the basis of experimental results obtained in a study of the fundamental aspects of how nanostructured layers are formed upon diffusion annealing on faceted single crystals of lead chalcogenides. Auger-spectroscopic data on the distribution of the elemental composition over the thickness of layers based on lead selenide–cadmium selenide solid solutions are presented.
Received: 19.11.2015 Accepted: 25.11.2015
Citation:
E. V. Maraeva, V. A. Moshnikov, A. A. Petrov, Yu. M. Tairov, “Oxidation model of polycrystalline lead-chalcogenide layers in an iodine-containing medium”, Fizika i Tekhnika Poluprovodnikov, 50:6 (2016), 791–793; Semiconductors, 50:6 (2016), 775–777
Linking options:
https://www.mathnet.ru/eng/phts6440 https://www.mathnet.ru/eng/phts/v50/i6/p791
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Abstract page: | 37 | Full-text PDF : | 9 |
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