|
|
|
Publications in Math-Net.Ru |
Citations |
|
2021 |
| 1. |
A. A. Ivanov, V. V. Chaldyshev, E. E. Zavarin, A. V. Sakharov, V. V. Lundin, A. F. Tsatsul'nikov, “Resonant light reflection from an optical lattice of excitons formed by 100 InGaN quantum wells”, Fizika i Tekhnika Poluprovodnikov, 55:9 (2021), 733–737   |
1
|
| 2. |
A. N. Kosarev, V. V. Chaldyshev, “Charge carrier localization in InAs self-organized quantum dots”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:23 (2021), 51–54 |
2
|
|
2019 |
| 3. |
A. N. Kosarev, V. V. Chaldyshev, A. A. Kondikov, T. A. Vartanyan, N. A. Toropov, I. A. Gladskikh, P. V. Gladskikh, I. Akimov, M. Bayer, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin, “Epitaxial InGaAs quantum dots in Al$_{0.29}$Ga$_{0.71}$ As matrix: intensity and kinetics of luminescence in the near field of silver nanoparticles”, Optics and Spectroscopy, 126:5 (2019), 573–577 ; Optics and Spectroscopy, 126:5 (2019), 492–496 |
5
|
|
2018 |
| 4. |
V. I. Ushanov, V. V. Chaldyshev, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin, “Diffusion blurring of GaAs quantum wells grown at low temperature”, Fizika i Tekhnika Poluprovodnikov, 52:13 (2018), 1597–1600 ; Semiconductors, 52:13 (2018), 1704–1707 |
2
|
| 5. |
V. I. Ushanov, V. V. Chaldyshev, V. V. Preobrazhenskiy, M. A. Putyato, B. R. Semyagin, “Resonant optical reflection from AsSb–AlGaAs metamaterials and structures”, Fizika i Tekhnika Poluprovodnikov, 52:4 (2018), 471 ; Semiconductors, 52:4 (2018), 468–472 |
| 6. |
V. V. Chaldyshev, E. V. Kundelev, A. N. Poddubny, A. P. Vasil'ev, M. A. Yagovkina, Y. Chen, N. Maharjan, Z. Liu, M. L. Nakarmi, N. M. Shakya, “Optical properties of AlGaAs/GaAs resonant Bragg structure at the second quantum state”, Fizika i Tekhnika Poluprovodnikov, 52:4 (2018), 466 ; Semiconductors, 52:4 (2018), 447–451 |
|
2016 |
| 7. |
V. I. Ushanov, V. V. Chaldyshev, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin, “Bragg resonance in a system of AsSb plasmonic nanoinclusions in AlGaAs”, Fizika i Tekhnika Poluprovodnikov, 50:12 (2016), 1620–1624 ; Semiconductors, 50:12 (2016), 1595–1599 |
1
|
| 8. |
A. N. Kosarev, V. V. Chaldyshev, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin, “Effect of a low-temperature-grown GaAs layer on InAs quantum-dot photoluminescence”, Fizika i Tekhnika Poluprovodnikov, 50:11 (2016), 1519–1526 ; Semiconductors, 50:11 (2016), 1499–1505 |
4
|
| 9. |
A. S. Bolshakov, V. V. Chaldyshev, E. E. Zavarin, A. V. Sakharov, V. V. Lundin, A. F. Tsatsul'nikov, “Optical spectroscopy of a resonant Bragg structure with InGaN/GaN quantum wells”, Fizika i Tekhnika Poluprovodnikov, 50:11 (2016), 1451–1454 ; Semiconductors, 50:11 (2016), 1431–1434 |
4
|
|
1992 |
| 10. |
N. B. Pyshnaya, S. I. Radautsan, V. V. Chaldyshev, V. A. Chumak, Yu. V. Shmartsev, “Изовалентное легирование фосфида индия галлием и мышьяком в процессе
жидкофазной эпитаксии”, Fizika i Tekhnika Poluprovodnikov, 26:10 (1992), 1737–1741 |
| 11. |
R. X. Akchurin, V. A. Zhegalin, V. V. Chaldyshev, “Электрические и фотолюминесцентные свойства эпитаксиальных слоев
$\text{GaSb}\langle\text{Bi}\rangle$ и $\text{GaSb}\langle\text{Bi,Sn}\rangle$,
полученных из висмутовых растворов”, Fizika i Tekhnika Poluprovodnikov, 26:8 (1992), 1409–1414 |
|
1991 |
| 12. |
L. V. Golubev, A. V. Egorov, S. V. Novikov, I. G. Savelev, V. V. Chaldyshev, R. G. Shapovalov, Yu. V. Shmartsev, “USE OF ELECTROLIQUID EPITAXY FOR THE GROWING VOLUME CRYSTALS AND
SIMULTANEOUS PREPARATION OF LAYERS ON SEVERAL SUBSTRATES”, Zhurnal Tekhnicheskoi Fiziki, 61:3 (1991), 74–79 |
| 13. |
V. N. Denisov, B. N. Mavrin, S. V. Novikov, V. V. Chaldyshev, Yu. V. Shmartsev, “Комбинационное рассеяние в эпитаксиальных пленках GaAs, легированных
изовалентными примесями Bi и In: влияние дефектов и затухание плазмофонона”, Fizika i Tekhnika Poluprovodnikov, 25:8 (1991), 1472–1475 |
| 14. |
V. S. Abramov, I. P. Akimchenko, V. A. Dravin, N. N. Dymova, V. V. Krasnopevtsev, V. V. Chaldyshev, Yu. V. Shmartsev, “Совместная имплантация в полуизолирующий арсенид галлия электрически
активной и изовалентной примесей”, Fizika i Tekhnika Poluprovodnikov, 25:8 (1991), 1355–1360 |
| 15. |
E. V. Astrova, I. A. Bobrovnikova, M. D. Vilisova, O. M. Ivleva, L. G. Lavrenteva, A. A. Lebedev, I. V. Teterkina, V. V. Chaldyshev, N. A. Chernov, Yu. V. Shmartsev, “Влияние изовалентного легирования индием на свойства эпитаксиальных
слоев арсенида галлия, выращенного из газовой фазы”, Fizika i Tekhnika Poluprovodnikov, 25:5 (1991), 898–903 |
|
1990 |
| 16. |
D. I. Lubyshev, V. P. Migal, V. V. Preobrazhenskii, B. R. Semyagin, S. I. Stenin, V. V. Chaldyshev, Yu. V. Shmartsev, “О механизме воздействия изовалентной примеси In на свойства
и ансамбль дефектов GaAs, выращиваемого методом молекулярно-лучевой
эпитаксии”, Fizika i Tekhnika Poluprovodnikov, 24:10 (1990), 1862–1866 |
| 17. |
I. P. Akimchenko, N. N. Dymova, V. V. Chaldyshev, Yu. V. Shmartsev, “Полоса фотолюминесценции 1.44 эВ в GaAs, имплантированном азотом
и кремнием”, Fizika i Tekhnika Poluprovodnikov, 24:10 (1990), 1857–1861 |
| 18. |
V. P. Germogenov, Y. I. Otman, V. V. Chaldyshev, Yu. V. Shmartsev, L. E. Epiktetova, “Подавление «природных» акцепторов в GaSb путем
изовалентного легирования висмутом”, Fizika i Tekhnika Poluprovodnikov, 24:6 (1990), 1095–1100 |
| 19. |
V. A. Bykovskij, L. A. Ivanyutin, T. I. Kol'chenko, V. M. Lomako, I. N. Tsyplenkov, V. V. Chaldyshev, Yu. V. Shmartsev, “Особенности поведения изовалентной примеси — индия при легировании
арсенида галлия в процессе газофазовой эпитаксии из металлоорганических
соединений”, Fizika i Tekhnika Poluprovodnikov, 24:1 (1990), 77–81 |
|
1989 |
| 20. |
V. V. Vorob'eva, O. V. Zushinskaya, S. V. Novikov, I. G. Savelev, V. V. Chaldyshev, “DOUBLE ISOVALENT ALLOYING OF GALLIUM-ARSENIDE BY BISMUTH AND INDIUM”, Zhurnal Tekhnicheskoi Fiziki, 59:8 (1989), 164–167 |
| 21. |
D. I. Lubyshev, V. P. Migel, V. V. Preobrazhenskii, V. V. Chaldyshev, Yu. V. Shmartsev, “Влияние отношения потоков мышьяка и галлия на люминесценцию арсенида
галлия, полученного методом молекулярно-лучевой эпитаксии”, Fizika i Tekhnika Poluprovodnikov, 23:10 (1989), 1913–1916 |
| 22. |
V. I. Germogenov, Y. I. Otman, V. V. Chaldyshev, Yu. V. Shmartsev, “Ширина запрещенной зоны в твердом растворе
GaSb$_{1-x}$Bi$_{x}$”, Fizika i Tekhnika Poluprovodnikov, 23:8 (1989), 1517–1518 |
| 23. |
N. A. Anastaseva, Yu. N. Bolsheva, V. B. Osvenskii, I. V. Stepantsova, V. V. Chaldyshev, Yu. V. Shmartsev, “Влияние легирования индием на люминесценцию монокристаллов арсенида
галлия”, Fizika i Tekhnika Poluprovodnikov, 23:7 (1989), 1259–1262 |
| 24. |
Yu. F. Birulin, T. A. Lagvilava, M. G. Mil'vidskii, V. A. Pisarevskaya, E. V. Soloveva, V. V. Chaldyshev, Yu. V. Shmartsev, “Об одной особенности донора — серы в GaP”, Fizika i Tekhnika Poluprovodnikov, 23:6 (1989), 1070–1075 |
| 25. |
V. V. Chaldyshev, N. A. Yakusheva, “Люминесценция глубоких уровней в $n$-GaAs : Ge, Bi”, Fizika i Tekhnika Poluprovodnikov, 23:2 (1989), 221–223 |
| 26. |
V. V. Chaldyshev, N. A. Yakusheva, “Амфотерные свойства германия в GaAs : Bi”, Fizika i Tekhnika Poluprovodnikov, 23:1 (1989), 44–47 |
|
1988 |
| 27. |
V. M. Amusya, Yu. F. Birulin, V. V. Vorob'eva, L. V. Golubev, S. V. Novikov, V. V. Chaldyshev, Yu. V. Shmartsev, “Зависимость ширины запрещенной зоны от состава в твердом растворе
InP$_{1-x}$Sb$_{x}$ (${x\leqslant 0.07}$)”, Fizika i Tekhnika Poluprovodnikov, 22:2 (1988), 342–344 |
| 28. |
Yu. F. Birulin, V. P. Germogenov, O. M. Ivleva, S. G. Konnikov, Y. I. Otman, V. V. Tretyakov, V. V. Chaldyshev, Yu. V. Shmartsev, V. A. Shulbakh, L. E. Epiktetova, “SOLID-SOLUTIONS IN THE GA-SB-BI SYSTEMS”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:18 (1988), 1651–1655 |
|
1987 |
| 29. |
Yu. F. Birulin, V. V. Vorob'eva, V. G. Golubev, L. V. Golubev, V. I. Ivanov-Omskii, S. V. Novikov, A. V. Osutin, I. G. Savelev, V. V. Chaldyshev, Yu. V. Shmartsev, O. V. Yaroshevich, “Mechanism of «Purification» of Gallium Arsenide by Bismuth”, Fizika i Tekhnika Poluprovodnikov, 21:12 (1987), 2201–2209 |
| 30. |
Yu. F. Birulin, V. P. Germogenov, Y. I. Otman, V. V. Chaldyshev, Yu. V. Shmartsev, L. E. Epiktetova, “Effect of Isovalent Indium-Doping on «Natural» Acceptors in Gallium Antimonide”, Fizika i Tekhnika Poluprovodnikov, 21:6 (1987), 1118–1124 |
| 31. |
Yu. F. Birulin, L. V. Golubev, S. V. Novikov, V. V. Chaldyshev, Yu. V. Shmartsev, “Effect of Isovalent Bismuth Doping on Shallow-Acceptor Concentration in Gallium Arsenide”, Fizika i Tekhnika Poluprovodnikov, 21:5 (1987), 949–952 |
| 32. |
Yu. F. Birulin, V. V. Vorob'eva, L. V. Golubev, S. V. Novikov, V. V. Chaldyshev, Yu. V. Shmartsev, “Photoluminescence of germanium-alloyed and bismuth-alloyed $Ga\,As$”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:20 (1987), 1264–1267 |
| 33. |
Yu. F. Birulin, V. G. Nikitin, D. L. Nugmanov, V. V. Chaldyshev, “Compensation of radical admixtures in epitaxial layers of $Ga\,As:Bi$”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:20 (1987), 1255–1259 |
| 34. |
Yu. F. Birulin, G. S. Vil'dgrube, V. N. Karyaev, A. I. Klimin, T. N. Palts, V. V. Chaldyshev, Yu. V. Shmartsev, “Nea photocathodes based on $Ga\,As_{1-x}\,Sb_{x}$ solid-solutions – their application in photomultipliers”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:14 (1987), 833–835 |
| 35. |
Yu. F. Birulin, V. V. Vorob'eva, L. V. Golubev, S. V. Novikov, V. V. Chaldyshev, T. V. Cherneva, Yu. V. Shmartsev, “Solid-solution in the indium phosphide–indium antimonide system”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:3 (1987), 188–191 |
|
1986 |
| 36. |
R. Kh. Akchurin, Yu. F. Birulin, S. A. Islamov, V. V. Chaldyshev, Yu. V. Shmartsev, “Photoluminescence of Bismuth-Doped InP”, Fizika i Tekhnika Poluprovodnikov, 20:7 (1986), 1258–1261 |
| 37. |
Yu. F. Birulin, N. V. Ganinia, V. V. Chaldyshev, Yu. V. Shmartsev, “The purification of gallium-arsenide by bismuth”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:5 (1986), 274–276 |
|
1985 |
| 38. |
Yu. F. Birulin, N. V. Ganinia, V. V. Chaldyshev, Yu. V. Shmartsev, “To the Problem of Variation of Shallow-Impurity Compensation Degree under Isovalent Doping of Gallium
Arsenide”, Fizika i Tekhnika Poluprovodnikov, 19:6 (1985), 1104–1107 |
|
1984 |
| 39. |
S. G. Petrosyan, V. V. Chaldyshev, A. Ya. Shik, “Люминесценция неоднородных полупроводниковых твердых растворов”, Fizika i Tekhnika Poluprovodnikov, 18:9 (1984), 1565–1572 |
| 40. |
Yu. F. Birulin, R. R. Ichkitidze, V. V. Chaldyshev, Yu. V. Shmartsev, “On the Dependence of Photoluminescence
Quantum Yield in GaAs$_{1-x}$Sb$_{x}$ Solid Solution on Temperature
and Composition”, Fizika i Tekhnika Poluprovodnikov, 18:7 (1984), 1251–1255 |
|
1983 |
| 41. |
Yu. F. Birulin, N. V. Ganinia, M. G. Mil'vidskii, V. V. Chaldyshev, Yu. V. Shmartsev, “Фотолюминесценция твердых растворов
GaAs$_{1-x}$Sb$_{x}$ И Ga$_{1-x}$In$_{x}$As (${x< 0.01}$)”, Fizika i Tekhnika Poluprovodnikov, 17:1 (1983), 108–114 |
| 42. |
Yu. F. Birulin, S. P. Vul', V. V. Chaldyshev, Yu. V. Shmartsev, “О зависимости ширины запрещенной зоны нелегированного твердого
раствора Al$_{x}$Ga$_{1-x}$Sb от состава (${0\leqslant x\leqslant1}$)
и температуры (${4.2\leqslant T\leqslant200}$ K)”, Fizika i Tekhnika Poluprovodnikov, 17:1 (1983), 103–107 |
| 43. |
Yu. F. Birulin, N. V. Ganinia, V. V. Chaldyshev, Yu. V. Shmartsev, “О корреляции в расположении мелких примесей в арсениде галлия,
легированном индием и сурьмой”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 9:4 (1983), 242–245 |
|
| Organisations |
|
| |
|
|
Contact us: