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Publications in Math-Net.Ru |
Citations |
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2021 |
| 1. |
V. G. Dubrovskii, “Nanoisland shape variation during selective epitaxy”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:14 (2021), 43–46   ; Tech. Phys. Lett., 47:10 (2021), 701–704 |
| 2. |
V. G. Dubrovskii, “Gallium diffusion flow direction during deposition on the surface with regular hole arrays”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:12 (2021), 27–30 ; Tech. Phys. Lett., 47:8 (2021), 601–604 |
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| 3. |
V. G. Dubrovskii, “The dependence of the growth rate and structure of III–V nanowires on the adatom collection area on the substrate surface”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:9 (2021), 37–40 ; Tech. Phys. Lett., 47:6 (2021), 440–443 |
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2020 |
| 4. |
V. G. Dubrovskii, R. R. Reznik, N. V. Kryzhanovskaya, I. V. Shtrom, E. D. Ubyivovk, I. P. Soshnikov, G. E. Cirlin, “MBE-grown In$_x$ Ga$_{1-x}$ As nanowires with 50% composition”, Fizika i Tekhnika Poluprovodnikov, 54:6 (2020), 542 ; Semiconductors, 54:6 (2020), 650–653 |
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| 5. |
V. G. Dubrovskii, I. V. Shtrom, “Growth kinetics of planar nanowires”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:20 (2020), 15–18 ; Tech. Phys. Lett., 46:10 (2020), 1008–1011 |
| 6. |
V. G. Dubrovskii, A. S. Sokolovskii, I. V. Shtrom, “Free energy of nucleus formation during growth of III–V semiconductor nanowires”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:18 (2020), 3–6 ; Tech. Phys. Lett., 46:9 (2020), 889–892 |
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| 7. |
V. G. Dubrovskii, A. S. Sokolovskii, H. Hijazi, “Limits of III–V nanowire growth”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:17 (2020), 26–29 ; Tech. Phys. Lett., 46:9 (2020), 859–863 |
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| 8. |
V. G. Dubrovskii, “Kinetics of nucleus growth from a nanophase”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:8 (2020), 3–6 ; Tech. Phys. Lett., 46:4 (2020), 357–360 |
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2019 |
| 9. |
A. A. Koryakin, E. D. Leshchenko, V. G. Dubrovskii, “Effect of elastic stresses on the formation of axial heterojunctions in ternary A$^{\mathrm{III}}$B$^{\mathrm{V}}$ nanowires”, Fizika Tverdogo Tela, 61:12 (2019), 2437–2441 |
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2017 |
| 10. |
E. D. Leshchenko, V. G. Dubrovskii, “Inhomogeneous dopant distribution in III–V nanowires”, Fizika i Tekhnika Poluprovodnikov, 51:11 (2017), 1480–1483 ; Semiconductors, 51:11 (2017), 1427–1430 |
| 11. |
V. G. Dubrovskii, “Dispersion of scale-invariant size-distribution functions”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:9 (2017), 3–9 ; Tech. Phys. Lett., 43:5 (2017), 413–415 |
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2016 |
| 12. |
N. V. Sibirev, A. A. Koryakin, V. G. Dubrovskii, “On a new method of heterojunction formation in III–V nanowires”, Fizika i Tekhnika Poluprovodnikov, 50:12 (2016), 1592–1594 ; Semiconductors, 50:12 (2016), 1566–1568 |
| 13. |
V. G. Dubrovskii, “Incubation time of heterogeneous growth of islands in the mode of incomplete condensation”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:22 (2016), 9–15 ; Tech. Phys. Lett., 42:11 (2016), 1103–1106 |
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| 14. |
E. D. Leshchenko, M. A. Turchina, V. G. Dubrovskii, “The initial stage of autocatalytic growth of GaAs filamentary nanocrystals”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:15 (2016), 95–102 ; Tech. Phys. Lett., 42:8 (2016), 818–821 |
| 15. |
V. G. Dubrovskii, “The length distribution function of semiconductor filamentary nanocrystals”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:13 (2016), 44–50 ; Tech. Phys. Lett., 42:7 (2016), 682–685 |
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| 16. |
V. G. Dubrovskii, “A model of axial heterostructure formation in III–V semiconductor nanowires”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:6 (2016), 104–110 ; Tech. Phys. Lett., 42:3 (2016), 332–335 |
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1990 |
| 17. |
V. G. Dubrovskii, “New microscopic models of clustering kinetics”, Prikl. Mekh. Tekh. Fiz., 31:1 (1990), 3–9 ; J. Appl. Mech. Tech. Phys., 31:1 (1990), 1–8 |
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