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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2016, Volume 42, Issue 6, Pages 104–110
(Mi pjtf6481)
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This article is cited in 3 scientific papers (total in 3 papers)
A model of axial heterostructure formation in III–V semiconductor nanowires
V. G. Dubrovskiiabc a Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg
b Ioffe Institute, St. Petersburg
c St. Petersburg National Research University of Information Technologies, Mechanics and Optics
Abstract:
A kinetic model of the formation of axial heterostructures in nanocrystalline wires (nanowires, NWs) of III–V semiconductor compounds growing according to the vapor–liquid–solid (VLS) mechanism is proposed. A general system of nonstationary equations for effective fluxes of two elements of the same group (e.g., group III) is formulated that allows the composition profile of a heterostructure to be calculated as a function of the coordinate and epitaxial growth conditions, including the flux of a group V element. Characteristic times of the composition relaxation, which determine the sharpness of the heteroboundary (heterointerface), are determined in the linear approximation. A temporal interruption (arrest) of fluxes during the switching of elements for a period exceeding these relaxation times must increase sharpness of the heteroboundary. Model calculations of the composition profile in a double GaAs/InAs/GaAs axial heterostructure have been performed for various NW radii.
Keywords:
Technical Physic Letter, Composition Profile, Indium Content, Group Versus Element, Versus Semiconductor Compound.
Received: 11.11.2015
Citation:
V. G. Dubrovskii, “A model of axial heterostructure formation in III–V semiconductor nanowires”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:6 (2016), 104–110; Tech. Phys. Lett., 42:3 (2016), 332–335
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https://www.mathnet.ru/eng/pjtf6481 https://www.mathnet.ru/eng/pjtf/v42/i6/p104
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