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Publications in Math-Net.Ru |
Citations |
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2023 |
| 1. |
V. A. Baitova, M. A. Knyazeva, I. A. Mukanov, A. O. Tarasevich, A. V. Naumov, A. G. Son, S. A. Kozyukhin, I. Yu. Eremchev, “Evolution of the luminescence properties of single CsPbBr$_3$ perovskite nanocrystals during photodegradation”, Pis'ma v Zh. Èksper. Teoret. Fiz., 118:8 (2023), 570–577  ; JETP Letters, 118:8 (2023), 560–567 |
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2022 |
| 2. |
S. A. Kozyukhin, P. I. Lazarenko, A. I. Popov, I. L. Eremenko, “Phase change memory materials and their applications”, Usp. Khim., 91:9 (2022), 1–39  ; Russian Chem. Reviews, 91:9 (2022), 1–38   |
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2018 |
| 3. |
K. V. Ivanov, A. V. Agafonov, A. Y. Baranchikov, V. K. Ivanov, S. A. Kozyukhin, E. V. Fatyushina, V. V. Kozik, “Influence of thermal treatment of nanometer-sized titanate and barium orthotitanate precursors on the electrorheological effect”, Nanosystems: Physics, Chemistry, Mathematics, 9:6 (2018), 746–753 |
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| 4. |
S. A. Kozyukhin, S. A. Bedin, P. G. Rudakovskaya, O. S. Ivanova, V. K. Ivanov, “Dielectric properties of nanocrystalline tungsten oxide in the temperature range of 223–293 K”, Fizika i Tekhnika Poluprovodnikov, 52:7 (2018), 745–750 ; Semiconductors, 52:7 (2018), 885–890 |
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| 5. |
S. A. Yakovlev, A. V. Ankudinov, Yu. V. Vorobyov, M. M. Voronov, S. A. Kozyukhin, B. T. Melekh, A. B. Pevtsov, “Laser-induced modification of the surface of Ge$_{2}$Sb$_{2}$Te$_{5}$ thin films: phase changes and periodic-structure formation”, Fizika i Tekhnika Poluprovodnikov, 52:6 (2018), 664–670 ; Semiconductors, 52:6 (2018), 809–815 |
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2017 |
| 6. |
A. A. Sherchenkov, S. A. Kozyukhin, P. I. Lazarenko, A. V. Babich, N. A. Bogoslovskii, I. V. Sagunova, E. N. Redichev, “Electrical properties and transport mechanisms in phase change memory thin films of quasi-binary-line GeTe–Sb$_{2}$Te$_{3}$ chalcogenide semiconductors”, Fizika i Tekhnika Poluprovodnikov, 51:2 (2017), 154–160 ; Semiconductors, 51:2 (2017), 146–152 |
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2016 |
| 7. |
S. A. Fefelov, L. P. Kazakova, D. Arsova, S. A. Kozyukhin, K. D. Tsendin, O. Yu. Prikhodko, “Voltage oscillations in the case of the switching effect in thin layers of Ge–Sb–Te chalcogenides in the current mode”, Fizika i Tekhnika Poluprovodnikov, 50:7 (2016), 958–962 ; Semiconductors, 50:7 (2016), 941–946 |
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