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Russian Chemical Reviews, 2022, Volume 91, Issue 9, RCR5033
DOI: https://doi.org/10.1070/RCR5033
 

This article is cited in 15 scientific papers (total in 15 papers)

Phase change memory materials and their applications

S. A. Kozyukhina, P. I. Lazarenkob, A. I. Popovc, I. L. Eremenkoa

a Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences, Moscow
b National Research University of Electronic Technology
c National Research University "Moscow Power Engineering Institute"
English full-text Citations (15)
Abstract: Over the past 30 years, phase change memory materials based on chalcogenide semiconductors have rapidly developed from laboratory prototypes to materials extensively used as functional layers in various devices. First of all, this concerns compounds of the Ge–Sb–Te system, which can be reasonably considered as full-fledged functional materials. The review presents a current view of the control of properties of phase change memory materials by their chemical and structural modification. Both the existing and prospective applications of these materials are highlighted. The discussion of chemical modification focuses on popular dopants such as bismuth, tin, oxygen and nitrogen and also refractory metals. In the discussion of structural modification, the use of laser radiation is considered in detail. Currently, this is a key trend in increasing the operation speed of devices based on phase change memory materials. Data on the formation of periodic surface structures in these materials are highlighted and it is emphasized that this effect could find application in nanophotonics and optoelectronics in the near future.
Bibliography — 366 references.
Keywords: phase-change memory, Ge-Sb-Te system materials, chalcogenide glassy semiconductors, phase transition, impurity elements, structural modifications, laser irradiation.
Funding agency Grant number
Russian Foundation for Basic Research 20-13-50295
Received: 15.07.2021
Russian version:
Uspekhi Khimii, 2022, Volume 91, Issue 9, RCR5033
DOI: https://doi.org/10.1070/RCR5033
Bibliographic databases:
Document Type: Article
Language: English
Original paper language: Russian
Citation: S. A. Kozyukhin, P. I. Lazarenko, A. I. Popov, I. L. Eremenko, “Phase change memory materials and their applications”, Usp. Khim., 91:9 (2022), RCR5033; Russian Chem. Reviews, 91:9 (2022), RCR5033
Citation in format AMSBIB
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  • https://doi.org/10.1070/RCR5033
  • This publication is cited in the following 15 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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