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This article is cited in 10 scientific papers (total in 10 papers)
Manufacturing, processing, testing of materials and structures
Laser-induced modification of the surface of Ge$_{2}$Sb$_{2}$Te$_{5}$ thin films: phase changes and periodic-structure formation
S. A. Yakovleva, A. V. Ankudinovab, Yu. V. Vorobyovc, M. M. Voronova, S. A. Kozyukhind, B. T. Melekha, A. B. Pevtsova a Ioffe Institute, St. Petersburg
b St. Petersburg National Research University of Information Technologies, Mechanics and Optics
c Ryazan State Radio Engineering University
d Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences, Moscow
Abstract:
Submicron periodic lattices are formed at the surface of phase-change-memory film materials based on the complex chalcogenide Ge$_{2}$Sb$_{2}$Te$_{5}$ when exposed to nanosecond laser pulses. The geometric characteristics and structural properties of laser-induced lattices are studied by optical and atomic-force microscopies and Raman spectroscopy. It is shown that, at appropriately chosen parameters of exposure to laser radiation, it is possible to implement periodic modulation of the refractive index in the structures formed. Modulation is due to the postexposure solidification of grating ridges and valleys in different phase states, whose dielectric constants widely differ from each other. In the vicinity of the maxima of the wavy structure, the amorphous state is mainly formed, whereas in the region of minima, the Ge$_{2}$Sb$_{2}$Te$_{5}$ structure corresponds mainly to the crystalline phase.
Received: 31.10.2017 Accepted: 08.11.2017
Citation:
S. A. Yakovlev, A. V. Ankudinov, Yu. V. Vorobyov, M. M. Voronov, S. A. Kozyukhin, B. T. Melekh, A. B. Pevtsov, “Laser-induced modification of the surface of Ge$_{2}$Sb$_{2}$Te$_{5}$ thin films: phase changes and periodic-structure formation”, Fizika i Tekhnika Poluprovodnikov, 52:6 (2018), 664–670; Semiconductors, 52:6 (2018), 809–815
Linking options:
https://www.mathnet.ru/eng/phts5819 https://www.mathnet.ru/eng/phts/v52/i6/p664
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