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Publications in Math-Net.Ru |
Citations |
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2023 |
| 1. |
N. N. Bragin, V. N. Svetogorov, Yu. L. Ryaboshtan, A. A. Marmalyuk, A. V. Ivanov, M. A. Ladugin, “Features of high-power uni-traveling-carrier InGaAs/InP photodiodes”, Kvantovaya Elektronika, 53:11 (2023), 883–886  [Bull. Lebedev Physics Institute, 51:suppl. 2 (2024), S180–S184] |
| 2. |
D. R. Sabitov, V. N. Svetogorov, Yu. L. Ryaboshtan, M. A. Ladugin, A. A. Marmalyuk, M. G. Vasil'ev, A. M. Vasil'ev, Yu. O. Kostin, A. A. Shelyakin, “New high-reliability optical transmission modules based on powerful superluminescent diodes in the spectral range 1.5 – 1.6 μm”, Kvantovaya Elektronika, 53:7 (2023), 561–564 [Bull. Lebedev Physics Institute, 50:suppl. 11 (2023), S1246–S1251] |
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2022 |
| 3. |
D. R. Sabitov, V. N. Svetogorov, Yu. L. Ryaboshtan, M. A. Ladugin, A. A. Marmalyuk, M. G. Vasil'ev, A. M. Vasil'ev, Yu. O. Kostin, A. A. Shelyakin, “Compact superluminescent AlGaInAs/InP strain-compensated quantum-well diodes for fibre-optic gyroscopes”, Kvantovaya Elektronika, 52:6 (2022), 577–579 [Quantum Electron., 52:6 (2022), 577–579  ] |
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2021 |
| 4. |
V. N. Svetogorov, Yu. L. Ryaboshtan, N. A. Volkov, M. A. Ladugin, A. A. Padalitsa, A. A. Marmalyuk, K. V. Bakhvalov, D. A. Veselov, A. V. Lyutetskiy, V. A. Strelets, S. O. Slipchenko, N. A. Pikhtin, “High-power AlGaInAs/InP semiconductor lasers with an ultra-narrow waveguide emitting in the spectral range 1.9–2.0 μm”, Kvantovaya Elektronika, 51:10 (2021), 909–911  [Quantum Electron., 51:10 (2021), 909–911  ] |
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| 5. |
N. A. Volkov, V. N. Svetogorov, Yu. L. Ryaboshtan, A. Yu. Andreev, I. V. Yarotskaya, M. A. Ladugin, A. A. Padalitsa, A. A. Marmalyuk, S. O. Slipchenko, A. V. Lyutetskiy, D. A. Veselov, N. A. Pikhtin, “Comparison of AlGaInAs/InP semiconductor lasers (λ = 1450–1500 nm) with ultra-narrow and strongly asymmetric waveguides”, Kvantovaya Elektronika, 51:4 (2021), 283–286 [Quantum Electron., 51:4 (2021), 283–286 ] |
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| 6. |
N. A. Volkov, A. Yu. Andreev, I. V. Yarotskaya, Yu. L. Ryaboshtan, V. N. Svetogorov, M. A. Ladugin, A. A. Padalitsa, A. A. Marmalyuk, S. O. Slipchenko, A. V. Lyutetskiy, D. A. Veselov, N. A. Pikhtin, “Semiconductor AlGaInAs/InP lasers (λ = 1450 – 1500 nm) with a strongly asymmetric waveguide”, Kvantovaya Elektronika, 51:2 (2021), 133–136 [Quantum Electron., 51:2 (2021), 133–136 ] |
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2020 |
| 7. |
V. N. Svetogorov, Yu. L. Ryaboshtan, M. A. Ladugin, A. A. Padalitsa, N. A. Volkov, A. A. Marmalyuk, S. O. Slipchenko, A. V. Lyutetskiy, D. A. Veselov, N. A. Pikhtin, “AlGaInAs/InP semiconductor lasers with an ultra-narrow waveguide and an increased electron barrier”, Kvantovaya Elektronika, 50:12 (2020), 1123–1125 [Quantum Electron., 50:12 (2020), 1123–1125 ] |
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| 8. |
D. R. Sabitov, Yu. L. Ryaboshtan, V. N. Svetogorov, A. A. Padalitsa, M. A. Ladugin, A. A. Marmalyuk, M. G. Vasil'ev, A. M. Vasil'ev, Yu. O. Kostin, A. A. Shelyakin, “Superluminescent diodes in the spectral range of 1.5–1.6 μm based on strain-compensated AlGaInAs/InP quantum wells”, Kvantovaya Elektronika, 50:9 (2020), 830–833 [Quantum Electron., 50:9 (2020), 830–833 ] |
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| 9. |
O. O. Bagaeva, A. I. Danilov, A. V. Ivanov, V. D. Kurnosov, K. V. Kurnosov, Yu. V. Kurnyavko, M. A. Ladugin, A. A. Marmalyuk, V. I. Romantsevich, Yu. L. Ryaboshtan, V. A. Simakov, V. N. Svetogorov, R. V. Chernov, “1.5 – 1.6 μm semiconductor lasers with an asymmetric periodic optically coupled waveguide”, Kvantovaya Elektronika, 50:6 (2020), 600–602 [Quantum Electron., 50:6 (2020), 600–602 ] |
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2019 |
| 10. |
A. A. Marmalyuk, A. V. Ivanov, V. D. Kurnosov, K. V. Kurnosov, M. A. Ladugin, A. V. Lobintsov, A. A. Padalitsa, V. I. Romantsevich, Yu. L. Ryaboshtan, S. M. Sapozhnikov, V. N. Svetogorov, V. A. Simakov, “AlGaInAs/InP semiconductor lasers with an increased electron barrier”, Kvantovaya Elektronika, 49:6 (2019), 519–521 [Quantum Electron., 49:6 (2019), 519–521 ] |
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