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Publications in Math-Net.Ru |
Citations |
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2021 |
1. |
A. M. Chekushkin, L. V. Filippenko, A. A. Lomov, D. Liu, Sh.-C. Shi, V. P. Koshelets, “Optimization of fabrication processes for Nb, NbN, NbTiN films and high-quality tunnel junctions for terahertz receiving circuits”, Zhurnal Tekhnicheskoi Fiziki, 91:10 (2021), 1577–1582 |
2. |
A. A. Lomov, B. M. Seredin, S. Yu. Martyushov, A. N. Zaichenko, I. L. Shul'pina, “The formation and structure of thermomigration silicon channels doped with Ga”, Zhurnal Tekhnicheskoi Fiziki, 91:3 (2021), 467–474 ; Tech. Phys., 66:3 (2021), 453–460 |
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2020 |
3. |
A. A. Lomov, B. M. Seredin, S. Yu. Martyushov, A. N. Zaichenko, S. G. Simakin, I. L. Shul'pina, “Structural perfection and composition of gallium-doped thermomigration silicon layers”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:6 (2020), 27–30 ; Tech. Phys. Lett., 46:3 (2020), 279–282 |
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2018 |
4. |
D. L. Zagorskii, K. V. Frolov, S. A. Bedin, I. V. Perunov, M. A. Chuev, A. A. Lomov, I. M. Doludenko, “Structure and magnetic properties of nanowires of iron group metals produced by matrix synthesis”, Fizika Tverdogo Tela, 60:11 (2018), 2075–2087 ; Phys. Solid State, 60:11 (2018), 2115–2126 |
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5. |
A. A. Lomov, A. V. Myakon'kikh, Yu. M. Chesnokov, V. V. Denisov, A. N. Kirichenko, V. N. Denisov, “Dose dependence of nanocrystal formation in helium-implanted silicon layers”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:7 (2018), 39–46 ; Tech. Phys. Lett., 44:4 (2018), 291–294 |
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2017 |
6. |
K. V. Frolov, D. L. Zagorskii, I. S. Lyubutin, M. A. Chuev, I. V. Perunov, S. A. Bedin, A. A. Lomov, V. V. Artemov, S. N. Sulyanov, “Magnetic and structural properties of Fe–Co nanowires fabricated by matrix synthesis in the pores of track membranes”, Pis'ma v Zh. Èksper. Teoret. Fiz., 105:5 (2017), 297–304 ; JETP Letters, 105:5 (2017), 319–326 |
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7. |
V. N. Lozovskii, A. A. Lomov, L. S. Lunin, B. M. Seredin, Yu. M. Chesnokov, “Crystal defects in solar cells produced by the method of thermomigration”, Fizika i Tekhnika Poluprovodnikov, 51:3 (2017), 297–301 ; Semiconductors, 51:3 (2017), 285–289 |
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1989 |
8. |
A. M. Afanas'ev, R. M. Imamov, A. A. Lomov, D. V. Novikov, “Single–crystal asymptotic Bragg diffraction”, Fizika Tverdogo Tela, 31:11 (1989), 176–181 |
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1988 |
9. |
A. A. Lomov, D. V. Novikov, D. A. Goganov, S. M. Gutkevich, “Measurement of grazing incidence X-ray diffraction scattering with a position sensitive detector”, Fizika Tverdogo Tela, 30:10 (1988), 2881–2884 |
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1986 |
10. |
A. M. Afanas'ev, P. A. Aleksandrov, A. A. Zavyalova, R. M. Imamov, A. A. Lomov, “Structure of the single crystal near-surface layer after the ion-chemical etching”, Dokl. Akad. Nauk SSSR, 289:5 (1986), 1120–1123 |
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1985 |
11. |
A. M. Afanas'ev, P. A. Aleksandrov, A. A. Zavyalova, R. M. Imamov, A. A. Lomov, “Three-crystal X-ray diffractometry in the Bragg–Laue sliding geometry”, Dokl. Akad. Nauk SSSR, 281:3 (1985), 581–584 |
12. |
A. M. Afanas'ev, S. M. Afanasev, P. A. Aleksandrov, A. A. Zavyalova, R. M. Imamov, A. A. Lomov, “Three-crystal diffractometry in grazing Bragg-Laue geometry with normal scanning”, Fizika Tverdogo Tela, 27:8 (1985), 2274–2281 |
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