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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2020, Volume 46, Issue 6, Pages 27–30
DOI: https://doi.org/10.21883/PJTF.2020.06.49161.18153 (Mi pjtf5156) 		 
This article is cited in 3 scientific papers (total in 3 papers)

Structural perfection and composition of gallium-doped thermomigration silicon layers

A. A. Lomova, B. M. Seredinb, S. Yu. Martyushovc, A. N. Zaichenkob, S. G. Simakind, I. L. Shul'pinae

a Insitute of Physics and Technology, Institution of Russian Academy of Sciences, Moscow
b South-Russian State Polytechnic University named M. I. Platov
c Technological Institute for Superhard and Novel Carbon Materials, Troitsk, Moscow
d Yaroslavl branch of the Institute of physics and technology, Institution of Russian academy of sciences
e Ioffe Institute, St. Petersburg
Full-text PDF (444 kB) Citations (3)
DOI: https://doi.org/10.21883/PJTF.2020.06.49161.18153
Abstract: A technique that allows one to form thick thermomigration silicon layers heavily doped with gallium for prospective power electronic devices is proposed. The dependences of the perfection of structure and the composition of the layers on the temperature of their formation were studied by the methods of X-ray topography, X-ray reflection curves, and secondary-ion mass spectrometry. It is established that the formed layers are single-crystal layers and do not contain misfit dislocations at the interface with the silicon substrate. It is shown that the concentration of gallium in the layers can be varied in the range of (1.6–4.8) $\times$ 10$^{19}$ cm$^{-3}$, which is higher than the concentration achieved in the case in which silicon is doped with aluminum.
Keywords: thermomigration, silicon, gallium, dislocations, X-ray, diffraction, secondary-ion mass spectrometry.
Funding agency Grant number
Ministry of Education and Science of the Russian Federation 0066-2019-0004
9-16 0040-2019-0016
Russian Foundation for Basic Research 19-07-00306
This work was performed within the framework of state assignments for the Valiev Institute of Physics and Technology, Russian Academy of Sciences (in accordance with topic no. 0066-2019-0004), and the Ioffe Physical Technical Institute, Russian Academy of Sciences (in accordance with topic no. 9-160040-2019-0016), as well as being partially supported by the Russian Foundation for Basic Research (grant no. 19-07-00306).
Received: 13.12.2019
Revised: 13.12.2019
Accepted: 17.12.2019
English version:
Technical Physics Letters, 2020, Volume 46, Issue 3, Pages 279–282
DOI: https://doi.org/10.1134/S1063785020030268
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. A. Lomov, B. M. Seredin, S. Yu. Martyushov, A. N. Zaichenko, S. G. Simakin, I. L. Shul'pina, “Structural perfection and composition of gallium-doped thermomigration silicon layers”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:6 (2020), 27–30; Tech. Phys. Lett., 46:3 (2020), 279–282
Citation in format AMSBIB
\Bibitem{LomSerMar20}
\by A.~A.~Lomov, B.~M.~Seredin, S.~Yu.~Martyushov, A.~N.~Zaichenko, S.~G.~Simakin, I.~L.~Shul'pina
\paper Structural perfection and composition of gallium-doped thermomigration silicon layers
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2020
\vol 46
\issue 6
\pages 27--30
\mathnet{http://mi.mathnet.ru/pjtf5156}
\crossref{https://doi.org/10.21883/PJTF.2020.06.49161.18153}
\elib{https://elibrary.ru/item.asp?id=42776951}
\transl
\jour Tech. Phys. Lett.
\yr 2020
\vol 46
\issue 3
\pages 279--282
\crossref{https://doi.org/10.1134/S1063785020030268}
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    • This publication is cited in the following 3 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    		Pisma v Zhurnal Tekhnicheskoi Fiziki Pisma v Zhurnal Tekhnicheskoi Fiziki
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