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This article is cited in 6 scientific papers (total in 6 papers)
Non-electronic properties of semiconductors (atomic structure, diffusion)
Crystal defects in solar cells produced by the method of thermomigration
V. N. Lozovskiia, A. A. Lomovb, L. S. Lunina, B. M. Seredina, Yu. M. Chesnokovc a Platov South-Russian State Polytechnic University (NPI), Novocherkassk, Russia
b Insitute of Physics and Technology, Institution of Russian Academy of Sciences, Moscow
c National Research Centre "Kurchatov Institute", Moscow
Abstract:
The results of studying the crystal structure of regions in silicon, recrystallized during the course of thermomigration of the liquid Si–Al zone in the volume of the silicon substrate, are reported (similar regions doped with an acceptor impurity are used to obtain high-voltage solar cells). X-ray methods (including measurements of both diffraction-reflection curves and topograms) and also high-resolution electron microscopy indicate that single-crystal regions in the form of a series of thin strips or rectangular grids are formed as a result of the thermomigration of liquid zones. Dislocation half-loops are detected in the surface layers of the front and back surfaces of the substrate. $\{311\}$-type defects are observed in the recrystallized regions.
Received: 12.04.2016 Accepted: 20.04.2016
Citation:
V. N. Lozovskii, A. A. Lomov, L. S. Lunin, B. M. Seredin, Yu. M. Chesnokov, “Crystal defects in solar cells produced by the method of thermomigration”, Fizika i Tekhnika Poluprovodnikov, 51:3 (2017), 297–301; Semiconductors, 51:3 (2017), 285–289
Linking options:
https://www.mathnet.ru/eng/phts6198 https://www.mathnet.ru/eng/phts/v51/i3/p297
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