|
|
|
Publications in Math-Net.Ru |
Citations |
|
2023 |
| 1. |
S. O. Slipchenko, A. A. Podoskin, V. V. Zolotarev, L. S. Vavilova, A. Yu. Leshko, M. G. Rastegaeva, I. V. Miroshnikov, I. S. Shashkin, N. A. Pikhtin, T. A. Bagaev, M. A. Ladugin, A. A. Padalitsa, A. A. Marmalyuk, V. A. Simakov, “High power and repetition rate integral laser source (1060 nm) based on laser diode array and 2D multi-element opto-thyristor array as a high-speed current switch”, Kvantovaya Elektronika, 53:1 (2023), 11–16  [Bull. Lebedev Physics Institute, 50:suppl. 5 (2023), S527–S534] |
1
|
|
2019 |
| 2. |
Yu. K. Bobretsova, D. A. Veselov, A. A. Klimov, L. S. Vavilova, V. V. Shamakhov, S. O. Slipchenko, N. A. Pikhtin, “Ultranarrow-waveguide AlGaAs/GaAs/InGaAs lasers”, Kvantovaya Elektronika, 49:7 (2019), 661–665  [Quantum Electron., 49:7 (2019), 661–665   ] |
5
|
|
2016 |
| 3. |
P. V. Seredin, A. V. Fedyukin, I. N. Arsent'ev, L. S. Vavilova, I. S. Tarasov, Tatiana Prutskij, Harald Leiste, Monika Rinke, “Structural and optical properties of GaAs(100) with a thin surface layer doped with chromium”, Fizika i Tekhnika Poluprovodnikov, 50:7 (2016), 869–876 ; Semiconductors, 50:7 (2016), 853–859 |
|
2015 |
| 4. |
D. A. Veselov, K. R. Ayusheva, I. S. Shashkin, K. V. Bakhvalov, V. V. Vasil'eva, L. S. Vavilova, A. V. Lyutetskiy, N. A. Pikhtin, S. O. Slipchenko, Z. N. Sokolova, I. S. Tarasov, “Optimisation of cavity parameters for lasers based on AlGaInAsP/InP solid solutions (λ=1470 nm)”, Kvantovaya Elektronika, 45:10 (2015), 879–883 [Quantum Electron., 45:10 (2015), 879–883 ] |
2
|
|
1985 |
| 5. |
Zh. I. Alferov, L. S. Vavilova, I. N. Arsent'ev, D. Z. Garbuzov, A. V. Tikunov, “Continuous short-wave ($\lambda=0,677\,\mu m$) injection-laser based on $In\,Ga\,As\,P/Ga\,As\,P$ RO DGS with $10$ mVt power”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:19 (1985), 1153–1157 |
| 6. |
Zh. I. Alferov, I. N. Arsent'ev, L. S. Vavilova, D. Z. Garbuzov, A. V. Tikunov, E. V. Tulashvili, “Band lasers based on PO $In\,Ga\,As\,P/Ga\,As$ DHS ($\lambda\simeq0.87\,\mu m$) with the thin active area”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:4 (1985), 205–209 |
|
1984 |
| 7. |
Zh. I. Alferov, I. N. Arsent'ev, L. S. Vavilova, D. Z. Garbuzov, A. V. Tikunov, R. S. Ignatkina, “Low-Threshold Visible GalnAsP/GaAsP DH Lasers (${T=300}$ K, ${\lambda=0.70{-}0.66}\,\mu m,$
${I_{\text{thresh}}\simeq1.5{-}3.2\,\text{êÀ}/\text{cm}^{2}}$)”, Fizika i Tekhnika Poluprovodnikov, 18:4 (1984), 757–758 |
| 8. |
Zh. I. Alferov, I. N. Arsent'ev, L. S. Vavilova, D. Z. Garbuzov, E. V. Tulashvili, “Visible Low-Threshold Pulsed and Continuous InGaAsP/InGaP/GaAs DH Lasers
in the $0.73{-}0.79 \mu m$ Region (${T=300}$ K, ${I_{n}=3.5{-}1.3\,\text{mA}/\text{cm}^{2}}$)”, Fizika i Tekhnika Poluprovodnikov, 18:1 (1984), 162–165 |
|
| Organisations |
|
| |
|
|
Contact us: