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Publications in Math-Net.Ru |
Citations |
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2020 |
| 1. |
V. M. Mikoushkin, “Unoccupied atomic-like states of gaas”, Pis'ma v Zh. Èksper. Teoret. Fiz., 112:12 (2020), 801–806   ; JETP Letters, 112:12 (2020), 764–768   |
| 2. |
V. M. Mikushkin, E. A. Makarevskaya, A. P. Solonitsyna, M. Brzhezinskaya, “The diagram of $p$–$n$ junction formed on the $n$-GaAs surface by 1.5 keV Ar$^+$ ion beam”, Fizika i Tekhnika Poluprovodnikov, 54:12 (2020), 1396 ; Semiconductors, 54:12 (2020), 1702–1705 |
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2019 |
| 3. |
N. A. Sobolev, V. I. Sakharov, I. T. Serenkov, A. D. Bondarev, K. V. Karabeshkin, E. V. Fomin, A. E. Kalyadin, V. M. Mikushkin, E. I. Shek, E. V. Sherstnev, “Defect formation under nitrogen-ion implantation and subsequent annealing in GaAs structures with an uncovered surface and a surface covered with an AlN film”, Fizika i Tekhnika Poluprovodnikov, 53:4 (2019), 437–440 ; Semiconductors, 53:4 (2019), 415–418 |
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2018 |
| 4. |
V. M. Mikoushkin, “Quantum well on the $n$-GaAs surface irradiated by argon ions”, Pis'ma v Zh. Èksper. Teoret. Fiz., 107:4 (2018), 248–251 ; JETP Letters, 107:4 (2018), 243–246 |
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| 5. |
V. M. Mikushkin, V. V. Bryzgalov, S. Yu. Nikonov, A. P. Solonitsyna, D. E. Marchenko, “Composition and band structure of the native oxide nanolayer on the ion beam treated surface of the GaAs wafer”, Fizika i Tekhnika Poluprovodnikov, 52:5 (2018), 506 ; Semiconductors, 52:5 (2018), 593–596 |
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| 6. |
N. A. Sobolev, A. E. Kalyadin, K. V. Karabeshkin, R. N. Kyutt, V. M. Mikushkin, E. I. Shek, E. V. Sherstnev, V. I. Vdovin, “Defect structure of GaAs layers implanted with nitrogen ions”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:18 (2018), 24–30 ; Tech. Phys. Lett., 44:9 (2018), 817–819 |
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| 7. |
N. A. Sobolev, B. Ya. Ber, D. Yu. Kazantsev, A. E. Kalyadin, K. V. Karabeshkin, V. M. Mikushkin, V. I. Sakharov, I. T. Serenkov, E. I. Shek, E. V. Sherstnev, N. M. Shmidt, “The effect of dose of nitrogen-ion implantation on the concentration of point defects introduced into GaAs layers”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:13 (2018), 44–50 ; Tech. Phys. Lett., 44:7 (2018), 574–576 |
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2016 |
| 8. |
V. M. Mikushkin, A. S. Kryukov, “Electron-stimulated reduction of the surface of graphite oxide”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:7 (2016), 1–9 ; Tech. Phys. Lett., 42:4 (2016), 337–340 |
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2015 |
| 9. |
V. M. Mikoushkin, A. S. Kryukov, “Electron-stimulated reduction of graphite oxide”, Pis'ma v Zh. Èksper. Teoret. Fiz., 102:7 (2015), 497–501 ; JETP Letters, 102:7 (2015), 443–447 |
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2014 |
| 10. |
E. O. Petrenko, M. V. Makarets, V. M. Mikushkin, V. M. Pugatch, “Simulation of secondary electron transport in thin metal and fullerite films”, Nanosystems: Physics, Chemistry, Mathematics, 5:1 (2014), 81–85 |
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1985 |
| 11. |
G. N. Ogurtsov, V. M. Mikushkin, I. P. Flaks, M. G. Sargsyan, “MO-mechanism of autoionization state formations during the proton shock”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:11 (1985), 652–655 |
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