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Publications in Math-Net.Ru |
Citations |
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2019 |
| 1. |
N. R. Grigor'eva, I. V. Shtrom, R. V. Grigor'ev, I. P. Soshnikov, R. R. Reznik, Yu. B. Samsonenko, N. V. Sibirev, G. E. Cirlin, “The influence of EL2 centers on the photoelectric response of an array of radial GaAs/AlGaAs nanowires”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:16 (2019), 37–40   ; Tech. Phys. Lett., 45:8 (2019), 835–838 |
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2018 |
| 2. |
G. E. Cirlin, R. R. Reznik, Yu. B. Samsonenko, A. I. Khrebtov, K. P. Kotlyar, I. V. Ilkiv, I. P. Sotnikov, D. A. Kirilenko, N. V. Kryzhanovskaya, “Phosphorus-based nanowires grown by molecular-beam epitaxy on silicon”, Fizika i Tekhnika Poluprovodnikov, 52:11 (2018), 1304–1307 ; Semiconductors, 52:11 (2018), 1416–1419 |
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| 3. |
G. E. Cirlin, R. R. Reznik, I. V. Shtrom, A. I. Khrebtov, Yu. B. Samsonenko, S. A. Kukushkin, T. Kasama, N. Akopian, “Hybrid GaAs/AlGaAs nanowire – quantum dot system for single photon sources”, Fizika i Tekhnika Poluprovodnikov, 52:4 (2018), 469 ; Semiconductors, 52:4 (2018), 462–464 |
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| 4. |
I. V. Shtrom, N. V. Sibirev, E. V. Ubyivovk, Yu. B. Samsonenko, A. I. Khrebtov, R. R. Reznik, A. D. Bouravlev, G. E. Cirlin, “GaP/Si(111) nanowire crystals synthesized by molecular-beam epitaxy with switching between the hexagonal and cubic phases”, Fizika i Tekhnika Poluprovodnikov, 52:1 (2018), 5–9 ; Semiconductors, 52:1 (2018), 1–5 |
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2017 |
| 5. |
I. V. Shtrom, N. V. Sibirev, E. V. Ubyivovk, Yu. B. Samsonenko, A. I. Khrebtov, R. R. Reznik, A. D. Bouravlev, G. E. Cirlin, “GaP/Si (111) nanowire crystals synthesized by molecular-beam epitaxy with switching between the hexagonal and cubic phases”, Fizika i Tekhnika Poluprovodnikov, 51:12 (2017), 1587 ; Semiconductors, 52:1 (2018), 1–5 |
| 6. |
V. G. Talalaev, V. I. Shtrom, Yu. B. Samsonenko, A. I. Khrebtov, A. D. Bouravlev, G. E. Cirlin, “Directional emission from beryllium doped GaAs/AlGaAs nanowires”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:17 (2017), 71–77 ; Tech. Phys. Lett., 43:9 (2017), 811–813 |
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2016 |
| 7. |
I. V. Shtrom, A. D. Bouravlev, Yu. B. Samsonenko, A. I. Khrebtov, I. P. Sotnikov, R. R. Reznik, G. E. Cirlin, V. Dhaka, A. Perros, H. Lipsanen, “Surface passivation of GaAs nanowires by the atomic layer deposition of AlN”, Fizika i Tekhnika Poluprovodnikov, 50:12 (2016), 1644–1646 ; Semiconductors, 50:12 (2016), 1619–1621 |
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| 8. |
G. E. Cirlin, I. V. Shtrom, R. R. Reznik, Yu. B. Samsonenko, A. I. Khrebtov, A. D. Bouravlev, I. P. Sotnikov, “Hybrid AlGaAs/GaAs/AlGaAs nanowires with a quantum dot grown by molecular beam epitaxy on silicon”, Fizika i Tekhnika Poluprovodnikov, 50:11 (2016), 1441–1444 ; Semiconductors, 50:11 (2016), 1421–1424 |
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| 9. |
A. E. Zhukov, G. E. Cirlin, R. R. Reznik, Yu. B. Samsonenko, A. I. Khrebtov, M. A. Kaliteevskii, K. A. Ivanov, N. V. Kryzhanovskaya, M. V. Maksimov, Zh. I. Alferov, “Multilayer heterostructures for quantum-cascade lasers operating in the terahertz frequency range”, Fizika i Tekhnika Poluprovodnikov, 50:5 (2016), 674–678 ; Semiconductors, 50:5 (2016), 662–666 |
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2015 |
| 10. |
V. N. Trukhin, A. S. Buyskih, A. D. Bouravlev, I. A. Mustafin, Yu. B. Samsonenko, A. V. Trukhin, G. E. Cirlin, M. A. Kaliteevski, D. A. Zeze, A. J. Gallant, “Generation of THz radiation by AlGaAs nanowires”, Pis'ma v Zh. Èksper. Teoret. Fiz., 102:5 (2015), 348–353 ; JETP Letters, 102:5 (2015), 316–320   |
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