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Publications in Math-Net.Ru |
Citations |
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2017 |
| 1. |
D. V. Yurasov, M. N. Drozdov, V. B. Shmagin, A. V. Novikov, “Antimony segregation in Si layers grown by molecular beam epitaxy on Si wafers with different crystallographic orientations”, Fizika i Tekhnika Poluprovodnikov, 51:12 (2017), 1611–1615   ; Semiconductors, 51:12 (2017), 1552–1556 |
| 2. |
A. V. Murel, V. B. Shmagin, V. L. Kryukov, S. S. Strelchenko, E. A. Surovegina, V. I. Shashkin, “Capacitance spectroscopy of hole traps in high-resistance gallium-arsenide structures grown by liquid-phase epitaxy”, Fizika i Tekhnika Poluprovodnikov, 51:11 (2017), 1538–1542 ; Semiconductors, 51:11 (2017), 1485–1489 |
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2016 |
| 3. |
V. B. Shmagin, S. N. Vdovichev, E. E. Morozova, A. V. Novikov, M. V. Shaleev, D. V. Shengurov, Z. F. Krasil'nik, “Electroluminescence from MIS silicon-based light emitters with arrays of self-assembled Ge(Si) nanoislands”, Fizika i Tekhnika Poluprovodnikov, 50:11 (2016), 1497–1500 ; Semiconductors, 50:11 (2016), 1475–1478 |
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2014 |
| 4. |
K. E. Kudryavtsev, D. I. Kryzhkov, L. V. Krasil’nikova, D. V. Shengurov, V. B. Shmagin, B. A. Andreev, Z. F. Krasil'nik, “Absorption cross section for the $^4I_{15/2}\to^4I_{13/2}$ transition of Er$^{3+}$ in Si:Er:O/SOI epitaxial layers”, Pis'ma v Zh. Èksper. Teoret. Fiz., 100:12 (2014), 913–918 ; JETP Letters, 100:12 (2014), 807–811   |
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