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Publications in Math-Net.Ru |
Citations |
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2016 |
| 1. |
D. V. Ishchenko, A. E. Klimov, V. N. Shumskii, V. S. Epov, “PbSnTe:In compound: Electron capture levels, galvanomagnetic properties, and THz sensitivity”, Fizika i Tekhnika Poluprovodnikov, 50:12 (2016), 1662–1668   ; Semiconductors, 50:12 (2016), 1635–1640 |
| 2. |
A. N. Akimov, A. E. Klimov, I. G. Neizvestnyi, V. N. Shumskii, V. S. Epov, “Specific temperature-related features of photoconductivity relaxation in PbSnTe:In films under interband excitation”, Fizika i Tekhnika Poluprovodnikov, 50:4 (2016), 447–453 ; Semiconductors, 50:4 (2016), 440–446 |
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2015 |
| 3. |
I. G. Neizvestnyi, A. E. Klimov, V. N. Shumsky, “Photon far-infrared and submillimeter array detectors”, UFN, 185:10 (2015), 1031–1042 ; Phys. Usp., 58:10 (2015), 952–962   |
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2003 |
| 4. |
I. A. Litvinova, I. G. Neizvestnyi, A. V. Prozorov, S. P. Suprun, V. N. Sherstyakova, V. N. Shumskii, “Charge accumulation in Ge quantum dots in a GaAs/ZnSe/QD-Ge/ZnSe/Ge floating gate transistor structure”, Pis'ma v Zh. Èksper. Teoret. Fiz., 78:12 (2003), 1289–1292 ; JETP Letters, 78:12 (2003), 768–771 |
| 5. |
I. Yu. Borodin, I. A. Litvinova, I. G. Neizvestnyi, A. V. Prozorov, S. P. Suprun, A. B. Talochkin, V. N. Sherstyakova, V. N. Shumskii, “Electric and photoelectric properties of GaAs/ZnSe–Ge/ZnSe/Al structures with Ge quantum dots”, Pis'ma v Zh. Èksper. Teoret. Fiz., 78:3 (2003), 184–187 ; JETP Letters, 78:3 (2003), 152–155 |
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2001 |
| 6. |
A. B. Talochkin, S. P. Suprun, A. V. Efanov, I. G. Kozhemyako, V. N. Shumskii, “Raman $E$ , $E_1+\Delta_1$ resonance in unstrained germanium quantum dots”, Pis'ma v Zh. Èksper. Teoret. Fiz., 73:6 (2001), 336–340 ; JETP Letters, 73:6 (2001), 297–300 |
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