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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2003, Volume 78, Issue 3, Pages 184–187
(Mi jetpl2512)
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This article is cited in 1 scientific paper (total in 1 paper)
Electric and photoelectric properties of GaAs/ZnSe–Ge/ZnSe/Al structures with Ge quantum dots
I. Yu. Borodin, I. A. Litvinova, I. G. Neizvestnyi, A. V. Prozorov, S. P. Suprun, A. B. Talochkin, V. N. Sherstyakova, V. N. Shumskii Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
Abstract:
Current-voltage characteristics and spectral dependences of photovoltage are investigated at $T=4.2$ and 300 K in stress-free structures with germanium quantum dots (QDs) in the GaAs/ZnSe/QD–Ge/ZnSe/Al system. The «Coulomb staircase» type features in the current-voltage characteristic observed at room temperature without illumination are due to the Coulomb interaction of electrons in resonant tunneling through intrinsic levels in QDs. The features in the photovoltage spectra are related to the absorption of radiation in the system of discrete levels of QDs. An energy band diagram of the structure is constructed based on the experimental data.
Received: 03.07.2003
Citation:
I. Yu. Borodin, I. A. Litvinova, I. G. Neizvestnyi, A. V. Prozorov, S. P. Suprun, A. B. Talochkin, V. N. Sherstyakova, V. N. Shumskii, “Electric and photoelectric properties of GaAs/ZnSe–Ge/ZnSe/Al structures with Ge quantum dots”, Pis'ma v Zh. Èksper. Teoret. Fiz., 78:3 (2003), 184–187; JETP Letters, 78:3 (2003), 152–155
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https://www.mathnet.ru/eng/jetpl2512 https://www.mathnet.ru/eng/jetpl/v78/i3/p184
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Abstract page: | 161 | Full-text PDF : | 53 | References: | 52 |
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