Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive
Impact factor

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS



Pis'ma v Zh. Èksper. Teoret. Fiz.:
Year:
Volume:
Issue:
Page:
Find






Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register


Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2003, Volume 78, Issue 3, Pages 184–187 (Mi jetpl2512)  

This article is cited in 1 scientific paper (total in 1 paper)

Electric and photoelectric properties of GaAs/ZnSe–Ge/ZnSe/Al structures with Ge quantum dots

I. Yu. Borodin, I. A. Litvinova, I. G. Neizvestnyi, A. V. Prozorov, S. P. Suprun, A. B. Talochkin, V. N. Sherstyakova, V. N. Shumskii

Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
Full-text PDF (251 kB) Citations (1)
References:
Abstract: Current-voltage characteristics and spectral dependences of photovoltage are investigated at $T=4.2$ and 300 K in stress-free structures with germanium quantum dots (QDs) in the GaAs/ZnSe/QD–Ge/ZnSe/Al system. The «Coulomb staircase» type features in the current-voltage characteristic observed at room temperature without illumination are due to the Coulomb interaction of electrons in resonant tunneling through intrinsic levels in QDs. The features in the photovoltage spectra are related to the absorption of radiation in the system of discrete levels of QDs. An energy band diagram of the structure is constructed based on the experimental data.
Received: 03.07.2003
English version:
Journal of Experimental and Theoretical Physics Letters, 2003, Volume 78, Issue 3, Pages 152–155
DOI: https://doi.org/10.1134/1.1618882
Bibliographic databases:
Document Type: Article
PACS: 73.63.Kv
Language: Russian
Citation: I. Yu. Borodin, I. A. Litvinova, I. G. Neizvestnyi, A. V. Prozorov, S. P. Suprun, A. B. Talochkin, V. N. Sherstyakova, V. N. Shumskii, “Electric and photoelectric properties of GaAs/ZnSe–Ge/ZnSe/Al structures with Ge quantum dots”, Pis'ma v Zh. Èksper. Teoret. Fiz., 78:3 (2003), 184–187; JETP Letters, 78:3 (2003), 152–155
Citation in format AMSBIB
\Bibitem{BorLitNei03}
\by I.~Yu.~Borodin, I.~A.~Litvinova, I.~G.~Neizvestnyi, A.~V.~Prozorov, S.~P.~Suprun, A.~B.~Talochkin, V.~N.~Sherstyakova, V.~N.~Shumskii
\paper Electric and photoelectric properties of GaAs/ZnSe--Ge/ZnSe/Al structures with Ge quantum dots
\jour Pis'ma v Zh. \`Eksper. Teoret. Fiz.
\yr 2003
\vol 78
\issue 3
\pages 184--187
\mathnet{http://mi.mathnet.ru/jetpl2512}
\transl
\jour JETP Letters
\yr 2003
\vol 78
\issue 3
\pages 152--155
\crossref{https://doi.org/10.1134/1.1618882}
\scopus{https://www.scopus.com/record/display.url?origin=inward&eid=2-s2.0-13944276985}
Linking options:
  • https://www.mathnet.ru/eng/jetpl2512
  • https://www.mathnet.ru/eng/jetpl/v78/i3/p184
  • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Письма в Журнал экспериментальной и теоретической физики Pis'ma v Zhurnal Иksperimental'noi i Teoreticheskoi Fiziki
    Statistics & downloads:
    Abstract page:161
    Full-text PDF :53
    References:52
     
      Contact us:
     Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2024