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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2001, Volume 73, Issue 6, Pages 336–340
(Mi jetpl4346)
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This article is cited in 1 scientific paper (total in 1 paper)
CONDENSED MATTER
Raman $E$ , $E_1+\Delta_1$ resonance in unstrained germanium quantum dots
A. B. Talochkin, S. P. Suprun, A. V. Efanov, I. G. Kozhemyako, V. N. Shumskii Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
Abstract:
Raman scattering by optical phonons in unstrained Ge quantum dots obtained in GaAs/ZnSe/Ge/ZnSe structures was studied using molecular beam epitaxy. A shift in the $E$ , $E_1+\Delta_1$ resonance energy due to the quantization of the spectrum of electron and hole states in quantum dots was observed. The properties observed were explained with the use of a simplest model of localization with allowance for the spectrum of Ge electron states.
Received: 12.02.2001
Citation:
A. B. Talochkin, S. P. Suprun, A. V. Efanov, I. G. Kozhemyako, V. N. Shumskii, “Raman $E$ , $E_1+\Delta_1$ resonance in unstrained germanium quantum dots”, Pis'ma v Zh. Èksper. Teoret. Fiz., 73:6 (2001), 336–340; JETP Letters, 73:6 (2001), 297–300
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https://www.mathnet.ru/eng/jetpl4346 https://www.mathnet.ru/eng/jetpl/v73/i6/p336
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Abstract page: | 99 | Full-text PDF : | 49 | References: | 1 |
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