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Russian Chemical Reviews, 1993, Volume 62, Issue 3, Pages 237–242
DOI: https://doi.org/10.1070/RC1993v062n03ABEH000015
(Mi rcr1090)
 

This article is cited in 39 scientific papers (total in 39 papers)

Synthesis of thin-layer structures by the ionic layer deposition method

V. P. Tolstoy

St. Petersburg State University, Scientific Research Institute of Chemistry
English full-text Citations (39)
Abstract: A review is presented of ionic layer deposition, one of the methods of synthesising thin-layer structures of a predetermined composition with very precise thinkness control on the surface of a support. Conditions for the synthesis of ultra-thin films of metal oxides, hydroxides, phosphates, chromates, sulfides, and tellurides on the surface of metals, semiconductors, and dielectrics are discussed. The advantages of the method are pointed out, including the possibility of synthesising layers in an automatic regime under mild conditions at room temperature on substrates of complex shape by using simple apparatus. The problems which prevent the wider use of the method are formulated, and ways of solving them are suggested. The bibliography includes 69 references.
Received: 08.09.1992
Russian version:
Uspekhi Khimii, 1993, Volume 62, Issue 3, Pages 260–266
DOI: https://doi.org/10.1070/RC1993v062n03ABEH000015
Bibliographic databases:
Document Type: Article
UDC: 548.0:612.315.592
Language: English
Original paper language: Russian


Citation: V. P. Tolstoy, “Synthesis of thin-layer structures by the ionic layer deposition method”, Usp. Khim., 62:3 (1993), 260–266; Russian Chem. Reviews, 62:3 (1993), 237–242
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  • This publication is cited in the following 39 articles:
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