Abstract:
A review is presented of ionic layer deposition, one of the methods of synthesising thin-layer structures of a predetermined composition with very precise thinkness control on the surface of a support. Conditions for the synthesis of ultra-thin films of metal oxides, hydroxides, phosphates, chromates, sulfides, and tellurides on the surface of metals, semiconductors, and dielectrics are discussed. The advantages of the method are pointed out, including the possibility of synthesising layers in an automatic regime under mild conditions at room temperature on substrates of complex shape by using simple apparatus. The problems which prevent the wider use of the method are formulated, and ways of solving them are suggested. The bibliography includes 69 references.
Received: 08.09.1992
Bibliographic databases:
Document Type:
Article
UDC:
548.0:612.315.592
Language: English
Original paper language: Russian
Citation:
V. P. Tolstoy, “Synthesis of thin-layer structures by the ionic layer deposition method”, Usp. Khim., 62:3 (1993), 260–266; Russian Chem. Reviews, 62:3 (1993), 237–242
Linking options:
https://www.mathnet.ru/eng/rcr1090
https://doi.org/10.1070/RC1993v062n03ABEH000015
https://www.mathnet.ru/eng/rcr/v62/i3/p260
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