Deep centers at the interface in In$_{2x}$Ga$_{2(1-x)}$Te$_{3}$/InAs and In$_{2}$Te$_{3}$/InAs heterostructures

The methods of admittance, I–V, and C–V characteristics are used to investigate In$_{2x}$Ga$_{2(1-x)}$Te$_{3}$/InAs and In$_{2}$Te$_{3}$/InAs heterostructures obtained by the technologies of quasi-closed volume and deposition. The spectrum of the distribution of local energy levels at the interface is established. A new acceptor center with an energy of 0.36 eV alongside the known donor level with an energy of 0.5 eV is found by the method of admittance. The acceptor-center concentration $N_t$ depends on the method of fabrication and technological modes. The kinetics of generation–recombination processes in the temperature range of 70–400 K does not affect the insulating properties of the In$_{2}$Te$_{3}$ or In$_{2x}$Ga$_{2(1-x)}$Te$_{3}$ ($x\approx$ 0.65) dielectric layer; therefore, the possibility of their use as heterostructures for field-effect transistors is demonstrated.