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Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 4, Pages 461–464 (Mi phts6486)  
Spectroscopy, interaction with radiation

Relaxation oscillations of superluminescence in a semiconductor caused by recovery of the Fermi distribution of nonequilibrium electrons

S. E. Kumekov, A. Mustafin, S. S. Mussatay

Kazakh National Technical University after K. I. Satpaev, Almaty, Kazakhstan
Full-text PDF (109 kB)
Abstract: It is shown that modulation of the superluminescence intensity on a characteristic time scale on the order of a few picoseconds may occur in a semiconductor because of relaxation oscillations that result from the “healing” of local perturbations of the quasi-Fermi distribution of nonequilibrium electrons in energy space. The conditions for observing this effect in GaAs are estimated.
Keywords: GaAs, Recovery Time, Semiconductor Laser, Optical Phonon, Characteristic Time Scale.
Received: 25.07.2015
Accepted: 21.09.2015
English version:
Semiconductors, 2016, Volume 50, Issue 4, Pages 453–456
DOI: https://doi.org/10.1134/S106378261604014X
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: S. E. Kumekov, A. Mustafin, S. S. Mussatay, “Relaxation oscillations of superluminescence in a semiconductor caused by recovery of the Fermi distribution of nonequilibrium electrons”, Fizika i Tekhnika Poluprovodnikov, 50:4 (2016), 461–464; Semiconductors, 50:4 (2016), 453–456
Citation in format AMSBIB
\Bibitem{KumMusMus16}
\by S.~E.~Kumekov, A.~Mustafin, S.~S.~Mussatay
\paper Relaxation oscillations of superluminescence in a semiconductor caused by recovery of the Fermi distribution of nonequilibrium electrons
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2016
\vol 50
\issue 4
\pages 461--464
\mathnet{http://mi.mathnet.ru/phts6486}
\elib{https://elibrary.ru/item.asp?id=25668242}
\transl
\jour Semiconductors
\yr 2016
\vol 50
\issue 4
\pages 453--456
\crossref{https://doi.org/10.1134/S106378261604014X}
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