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Fizika i Tekhnika Poluprovodnikov, 2017, Volume 51, Issue 12, Page 1587
DOI: https://doi.org/10.21883/FTP.2017.12.45167.27 (Mi phts5956) 		 
XXI International Symposium ''Nanophysics And Nanoelectronics'', Nizhny Novgorod, March 13-16, 2017

GaP/Si (111) nanowire crystals synthesized by molecular-beam epitaxy with switching between the hexagonal and cubic phases

I. V. Shtromab, N. V. Sibirevcd, E. V. Ubyivovkce, Yu. B. Samsonenkoab, A. I. Khrebtova, R. R. Reznikab, A. D. Bouravlevab, G. E. Cirlinaeb

a Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg
b Institute for Analytical Instrumentation, Russian Academy of Sciences, St. Petersburg
c Saint Petersburg State University
d Peter the Great St. Petersburg Polytechnic University
e St. Petersburg National Research University of Information Technologies, Mechanics and Optics
Full-text PDF (37 kB)
DOI: https://doi.org/10.21883/FTP.2017.12.45167.27
Abstract: A theoretical and experimental description of the synthesis of GaP nanowire crystals by molecularbeam epitaxy on Si(111) substrates with the use of gold as a catalyst is presented. The ratio between the fluxes of materials to be deposited and the substrate temperature are varied for a short time during nanowire synthesis in order to analyze the possibility of producing nanoinclusions of different polytypes. It is established that variations in the ratio between the fluxes of materials to be deposited and in the growth temperature bring about the controllable formation of inclusions, among them are structurally cubic crystalline regions. The inclusions are several nanometers thick.
Received: 27.04.2017
Accepted: 12.05.2017
English version:
Semiconductors, 2018, Volume 52, Issue 1, Pages 1–5
DOI: https://doi.org/10.1134/S1063782618010219
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: I. V. Shtrom, N. V. Sibirev, E. V. Ubyivovk, Yu. B. Samsonenko, A. I. Khrebtov, R. R. Reznik, A. D. Bouravlev, G. E. Cirlin, “GaP/Si (111) nanowire crystals synthesized by molecular-beam epitaxy with switching between the hexagonal and cubic phases”, Fizika i Tekhnika Poluprovodnikov, 51:12 (2017), 1587; Semiconductors, 52:1 (2018), 1–5
Citation in format AMSBIB
\Bibitem{ShtSibUby17}
\by I.~V.~Shtrom, N.~V.~Sibirev, E.~V.~Ubyivovk, Yu.~B.~Samsonenko, A.~I.~Khrebtov, R.~R.~Reznik, A.~D.~Bouravlev, G.~E.~Cirlin
\paper GaP/Si (111) nanowire crystals synthesized by molecular-beam epitaxy with switching between the hexagonal and cubic phases
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2017
\vol 51
\issue 12
\pages 1587
\mathnet{http://mi.mathnet.ru/phts5956}
\crossref{https://doi.org/10.21883/FTP.2017.12.45167.27}
\elib{https://elibrary.ru/item.asp?id=30729648}
\transl
\jour Semiconductors
\yr 2018
\vol 52
\issue 1
\pages 1--5
\crossref{https://doi.org/10.1134/S1063782618010219}
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