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XXI International Symposium ''Nanophysics And Nanoelectronics'', Nizhny Novgorod, March 13-16, 2017
Specific features of the photoexcitation spectra of epitaxial InN layers grown by molecular-beam epitaxy with the plasma activation of nitrogen
P. A. Bushuikina, A. V. Novikovab, B. A. Andreevab, D. N. Lobanovab, P. A. Yunina, E. V. Skorokhodova, L. V. Krasil’nikovaba, E. V. Demidova, G. M. Savchenkoc, V. Yu. Davydovc a Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
b Lobachevsky State University of Nizhny Novgorod
c Ioffe Institute, St. Petersburg
Abstract:
The results of studies of the photoexcitation spectra of epitaxial InN layers formed by molecular-beam epitaxy with the plasma activation of nitrogen are reported. The concentration of free charge carriers in the layers is 10$^{18}$–10$^{19}$ cm$^{-3}$. The photoconductivity, photoluminescence, and absorption spectra exhibit a shift of the long-wavelength threshold of interband transitions in accordance with the Burstein–Moss effect for $n$-InN with different concentrations of equilibrium electrons. In the samples, absolute negative photoconductivity with a nanosecond relaxation time is observed. The results of photoelectric, absorption, and luminescence spectroscopy experiments are correlated with the technological parameters and electron microscopy data.
Received: 23.04.2017 Accepted: 12.05.2017
Citation:
P. A. Bushuikin, A. V. Novikov, B. A. Andreev, D. N. Lobanov, P. A. Yunin, E. V. Skorokhodov, L. V. Krasil’nikova, E. V. Demidov, G. M. Savchenko, V. Yu. Davydov, “Specific features of the photoexcitation spectra of epitaxial InN layers grown by molecular-beam epitaxy with the plasma activation of nitrogen”, Fizika i Tekhnika Poluprovodnikov, 51:12 (2017), 1594–1598; Semiconductors, 51:12 (2017), 1537–1541
Linking options:
https://www.mathnet.ru/eng/phts5958 https://www.mathnet.ru/eng/phts/v51/i12/p1594
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