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Fizika i Tekhnika Poluprovodnikov, 2019, Volume 53, Issue 2, Pages 158–160
DOI: https://doi.org/10.21883/FTP.2019.02.47091.8893 (Mi phts5579) 		 
This article is cited in 6 scientific papers (total in 6 papers)

Electronic properties of semiconductors

Features of the properties of rare-earth semiconductors

V. V. Kaminskii, N. V. Sharenkova

Ioffe Institute, St. Petersburg
Full-text PDF (117 kB) Citations (6)
DOI: https://doi.org/10.21883/FTP.2019.02.47091.8893
Abstract: It is shown that the unique features of the physical properties of rare-earth semiconductor compounds are based on the small values of the ionization potentials of the rare-earth elements included in them. The reason for this is the presence of 4f shells in the electronic structure of the elements.
Received: 17.04.2018
Revised: 21.08.2018
English version:
Semiconductors, 2019, Volume 53, Issue 2, Pages 150–152
DOI: https://doi.org/10.1134/S106378261902012X
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: V. V. Kaminskii, N. V. Sharenkova, “Features of the properties of rare-earth semiconductors”, Fizika i Tekhnika Poluprovodnikov, 53:2 (2019), 158–160; Semiconductors, 53:2 (2019), 150–152
Citation in format AMSBIB
\Bibitem{KamSha19}
\by V.~V.~Kaminskii, N.~V.~Sharenkova
\paper Features of the properties of rare-earth semiconductors
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2019
\vol 53
\issue 2
\pages 158--160
\mathnet{http://mi.mathnet.ru/phts5579}
\crossref{https://doi.org/10.21883/FTP.2019.02.47091.8893}
\elib{https://elibrary.ru/item.asp?id=37476739}
\transl
\jour Semiconductors
\yr 2019
\vol 53
\issue 2
\pages 150--152
\crossref{https://doi.org/10.1134/S106378261902012X}
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  • https://www.mathnet.ru/eng/phts/v53/i2/p158
    • This publication is cited in the following 6 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    		Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
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