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Publications in Math-Net.Ru |
Citations |
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1988 |
| 1. |
U. A. Bekirev, S. A. Bondar', D. V. Galchenkov, R. A. Suris, M. A. Grankin, G. V. Ershova, V. N. Inkin, M. A. Malyshkin, “LASER LATTICE BASED ON THE MULTITRANSITION R-P-HETEROSTRUCTURE”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:23 (1988), 2140–2144  |
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1987 |
| 2. |
D. V. Galchenkov, I. M. Grodnenskii, I. I. Zasavitskii, K. V. Starostin, V. G. Mokerov, “Determination of Potential-Barrier Height in Heterojunctions with Two-Dimensional Electron Gas”, Fizika i Tekhnika Poluprovodnikov, 21:8 (1987), 1522–1524 |
| 3. |
D. V. Galchenkov, A. A. Gubarev, B. M. Lavrushin, A. S. Nasibov, P. V. Reznikov, O. V. Chernysheva, “Laser ERTof 5-watt with differential efficiency of 14% at 300 K”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:11 (1987), 689–693 |
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1985 |
| 4. |
V. A. Volkov, D. V. Galchenkov, I. M. Grodnenskii, M. I. Elinson, O. R. Matov, K. V. Starostin, O. V. Chernysheva, “Two-Dimensional Electronic Gas with High Mobility in Specially Undoped GaAs$-$Al$_{x}$Ga$_{1-x}$As Heterostructures
Grown by Liquid-Phase Epitaxy”, Fizika i Tekhnika Poluprovodnikov, 19:2 (1985), 333–336 |
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1984 |
| 5. |
O. V. Bogdankevich, N. A. Borisov, D. V. Galchenkov, I. I. Usvyat, O. V. Chernysheva, “Influence of deep impurity levels on the threshold characteristics of
electronbeam-pumped lasers made of $n-Ga_{1-x}Al_xAs$”, Kvantovaya Elektronika, 11:4 (1984), 833–835 [Sov J Quantum Electron, 14:4 (1984), 563–565  ] |
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1983 |
| 6. |
M. A. Malyshkin, D. V. Galchenkov, M. A. Grankin, S. A. Bondar', V. N. Vigdorovich, “Изменение концентации носителей при перестройке зонной структуры
в твердых растворах Al$_{x}$Ga$_{1-x}$As, легированных теллуром и оловом”, Fizika i Tekhnika Poluprovodnikov, 17:10 (1983), 1748–1751 |
| 7. |
V. A. Volkov, D. V. Galchenkov, I. M. Grodnenskii, M. I. Elinson, K. V. Starostin, “Двумерный электронный газ и анизотропия явлений переноса
в гетероструктуре GaAs$-$Al$_{s}$Ga$_{1-x}$As”, Fizika i Tekhnika Poluprovodnikov, 17:2 (1983), 288–293 |
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1981 |
| 8. |
O. V. Bogdankevich, S. A. Bondar', N. A. Borisov, D. V. Galchenkov, V. F. Pevtsov, S. S. Strel'chenko, “Electron-beam control of the radiation emitted by injection light sources”, Kvantovaya Elektronika, 8:5 (1981), 1126–1128 [Sov J Quantum Electron, 11:5 (1981), 674–675 ] |
| 9. |
O. V. Bogdankevich, S. A. Bondar', N. A. Borisov, D. V. Galchenkov, E. V. Nevstrueva, V. F. Pevtsov, Yu. V. Petrushenko, S. S. Strel'chenko, V. N. Tsventukh, “Influence of doping of Ga<sub>0.68</sub>Al<sub>0.32</sub>As on its cathodoluminescence and threshold current density of a laser pumped by an electron beam”, Kvantovaya Elektronika, 8:1 (1981), 201–204 [Sov J Quantum Electron, 11:1 (1981), 119–121 ] |
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1980 |
| 10. |
O. V. Bogdankevich, S. A. Bondar', N. A. Borisov, D. V. Galchenkov, A. D. Konovalov, V. F. Pevtsov, Yu. E. Petrushenko, S. S. Strel'chenko, V. N. Ulasyuk, “Multilayer $GaAs-AlAs$ heterostructure laser pumped transversely by an electron beam”, Kvantovaya Elektronika, 7:6 (1980), 1209–1212 [Sov J Quantum Electron, 10:6 (1980), 693–695 ] |
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1976 |
| 11. |
S. A. Bondar', N. A. Borisov, D. V. Galchenkov, B. M. Lavrushin, V. V. Lebedev, S. S. Strel'chenko, “Electron-beam-pumped semiconductor laser utilizing multilayer Ga<sub>1–<i>x</i></sub>ln<sub><i>x</i></sub>As<sub>1–<i>y</i></sub>Sb<sub>y</sub> heterostructures”, Kvantovaya Elektronika, 3:1 (1976), 94–100 [Sov J Quantum Electron, 6:1 (1976), 50–53] |
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