Electron-beam-pumped semiconductor laser utilizing multilayer Ga1–xlnxAs1–ySby heterostructures

Laser emission was obtained from Ga_1–xln_xAs_1–ySb_y solid solutions in the wavelength range 0.9–1.08 μ and the principal parameters of this laser were determined when it was pumped by an electron beam. The difference between the threshold current densities in the case of multilayer heterostructure was attributed to a redistribution of nonequilibrium carriers between the layers and establishment of a population inversion in the layer with the narrowest energy gap. An analysis was made of the possibility of a further reduction in the threshold current density by a suitable selection of the layers in a heterostructure and by reduction of the thickness of the active layer.