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This article is cited in 3 scientific papers (total in 3 papers)
Electron-beam-pumped semiconductor laser utilizing multilayer Ga1–xlnxAs1–ySby heterostructures
S. A. Bondar', N. A. Borisov, D. V. Galchenkov, B. M. Lavrushin, V. V. Lebedev, S. S. Strel'chenko
Abstract:
Laser emission was obtained from Ga1–xlnxAs1–ySby solid solutions in the wavelength range 0.9–1.08 μ and the principal parameters of this laser were determined when it was pumped by an electron beam. The difference between the threshold current densities in the case of multilayer heterostructure was attributed to a redistribution of nonequilibrium carriers between the layers and establishment of a population inversion in the layer with the narrowest energy gap. An analysis was made of the possibility of a further reduction in the threshold current density by a suitable selection of the layers in a heterostructure and by reduction of the thickness of the active layer.
Received: 20.06.1975
Citation:
S. A. Bondar', N. A. Borisov, D. V. Galchenkov, B. M. Lavrushin, V. V. Lebedev, S. S. Strel'chenko, “Electron-beam-pumped semiconductor laser utilizing multilayer Ga1–xlnxAs1–ySby heterostructures”, Kvantovaya Elektronika, 3:1 (1976), 94–100 [Sov J Quantum Electron, 6:1 (1976), 50–53]
Linking options:
https://www.mathnet.ru/eng/qe10809 https://www.mathnet.ru/eng/qe/v3/i1/p94
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Abstract page: | 132 | Full-text PDF : | 58 |
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