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Publications in Math-Net.Ru |
Citations |
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2016 |
| 1. |
A. V. Leonov, A. A. Malykh, V. N. Mordkovich, M. I. Pavlyuk, “A magnetosensitive thin-film silicon Hall-type field-effect transistor with operating temperature range expanded up to 350$^\circ$C”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:2 (2016), 30–36   ; Tech. Phys. Lett., 42:1 (2016), 71–74 |
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1984 |
| 2. |
A. G. Ital'yantsev, V. N. Mordkovich, E. M. Temper, “On the Role of Athermic Processes in Pulsed Annealing of Ion-Doped Si Layers”, Fizika i Tekhnika Poluprovodnikov, 18:5 (1984), 928–930 |
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