|
Pisma v Zhurnal Tekhnicheskoi Fiziki, 2016, Volume 42, Issue 2, Pages 30–36
(Mi pjtf6530)
|
|
|
|
This article is cited in 5 scientific papers (total in 5 papers)
A magnetosensitive thin-film silicon Hall-type field-effect transistor with operating temperature range expanded up to 350$^\circ$C
A. V. Leonova, A. A. Malykha, V. N. Mordkovicha, M. I. Pavlyukb a Institute of Microelectronics Technology and High-Purity Materials RAS, Chernogolovka, Moscow oblast, Russia
b Milandr Design and Production Corporation, Zelenograd, Moscow
Abstract:
We describe a magnetosensitive device consisting of a combination of a thin-film Si transistor with built-in conducting channel (fabricated by the silicon-on-insulator technology) and a Hall-type sensor (HS). The transistor has a double-gate field control system of the metal–insulator–semiconductor–insulator–metal type and operates in the regime of carrier accumulation in the channel at partial depletion of adjacent regions of the Si film. It is established that the device can operate at temperatures up to about 350$^\circ$C, which is 160–180$^\circ$C higher than the maximum operating temperature of HSs based on bulk Si crystals and comparable with HSs based on wide-bandgap semiconductors.
Keywords:
Technical Physic Letter, Carrier Accumulation, Partial Depletion, Integrate Magnetic Field, Temperature Range Expand.
Received: 04.08.2015
Citation:
A. V. Leonov, A. A. Malykh, V. N. Mordkovich, M. I. Pavlyuk, “A magnetosensitive thin-film silicon Hall-type field-effect transistor with operating temperature range expanded up to 350$^\circ$C”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:2 (2016), 30–36; Tech. Phys. Lett., 42:1 (2016), 71–74
Linking options:
https://www.mathnet.ru/eng/pjtf6530 https://www.mathnet.ru/eng/pjtf/v42/i2/p30
|
Statistics & downloads: |
Abstract page: | 18 | Full-text PDF : | 7 |
|