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Publications in Math-Net.Ru |
Citations |
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2020 |
| 1. |
A. V. Baglov, E. B. Chubenko, A. A. Hnitsko, V. E. Borisenko, A. A. Malashevich, V. V. Uglov, “Structural and photoluminescence properties of graphite-like carbon nitride”, Fizika i Tekhnika Poluprovodnikov, 54:2 (2020), 176–180   ; Semiconductors, 54:2 (2020), 228–232 |
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2019 |
| 2. |
N. M. Denisov, E. B. Chubenko, V. P. Bondarenko, V. E. Borisenko, “Synthesis of oxygen-doped graphitic carbon nitride from thiourea”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:3 (2019), 49–51 ; Tech. Phys. Lett., 45:2 (2019), 108–110 |
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2018 |
| 3. |
N. M. Denisov, E. B. Chubenko, V. P. Bondarenko, V. E. Borisenko, “Optical properties of multilayered sol–gel zinc-oxide films”, Fizika i Tekhnika Poluprovodnikov, 52:6 (2018), 575–580 ; Semiconductors, 52:6 (2018), 723–728 |
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2006 |
| 4. |
S. K. Lazaruk, A. V. Dolbik, V. A. Labunov, V. E. Borisenko, “Spherical plasmoids formed upon the combustion and explosion of nanostructured hydrated silicon”, Pis'ma v Zh. Èksper. Teoret. Fiz., 84:11 (2006), 695–699 ; JETP Letters, 84:11 (2006), 581–584   |
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1987 |
| 5. |
R. M. Bayazitov, V. E. Borisenko, D. A. Konovalov, V. M. Maksimenko, S. G. Yudin, “Decomposition of Supresaturated Solution of Phosphorus Substitution in Silicon under Thermal Treatment of Second Duration”, Fizika i Tekhnika Poluprovodnikov, 21:8 (1987), 1505–1508 |
| 6. |
V. E. Borisenko, A. G. Dutov, K. E. Lobanova, S. G. Yudin, “Redistribution of Phosphorus in Implanted Silicon Annealed by a Laser under Subsequent Second Thermal Treatment”, Fizika i Tekhnika Poluprovodnikov, 21:8 (1987), 1466–1469 |
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1986 |
| 7. |
V. E. Borisenko, D. I. Zarovskiy, V. A. Labunov, A. N. Larsen, “GROWTH OF TITANIUM DISILICIDES DURING THE 2ND THERMAL-TREATMENT OF
TITANIUM FILMS ON SILICON”, Zhurnal Tekhnicheskoi Fiziki, 56:5 (1986), 981–983 |
| 8. |
V. P. Bondarenko, V. E. Borisenko, V. A. Labunov, “Arsenic Diffusion through Porous Silicon under Thermal Treatment by Incoherent Light during a Second”, Fizika i Tekhnika Poluprovodnikov, 20:5 (1986), 929–933 |
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1985 |
| 9. |
V. E. Borisenko, D. I. Zarovskiy, “CHROMIUM SILICIDE FORMATION DURING THE 2ND THERMAL-TREATMENT”, Zhurnal Tekhnicheskoi Fiziki, 55:10 (1985), 2025–2026 |
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1984 |
| 10. |
V. P. Bondarenko, V. E. Borisenko, L. F. Gorskaya, A. M. Dorofeev, A. G. Dutov, “REDISTRIBUTION OF GOLD IN MONOCRYSTAL SILICON ON THE BOUNDARY WITH
POROUS SILICON DURING THE 2ND ANNEALING BY INCOHERENT-LIGHT”, Zhurnal Tekhnicheskoi Fiziki, 54:10 (1984), 2021–2026 |
| 11. |
V. E. Borisenko, D. I. Zarovskiy, “Секундный отжиг имплантированного кремния низкоэнергетическими
электронами”, Fizika i Tekhnika Poluprovodnikov, 18:10 (1984), 1909–1911 |
| 12. |
V. E. Borisenko, A. G. Dutov, V. A. Kolosov, K. E. Lobanova, “Радиационно-стимулированное перераспределение сурьмы в кремнии”, Fizika i Tekhnika Poluprovodnikov, 18:10 (1984), 1888–1890 |
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1983 |
| 13. |
V. E. Borisenko, “Образование $n$-слоев в кремнии при бомбардировке ионами кислорода”, Fizika i Tekhnika Poluprovodnikov, 17:1 (1983), 169–170 |
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1980 |
| 14. |
V. E. Borisenko, S. A. Konstantinova, G. T. Pak, G. I. Ryabtsev, I. V. Yashumov, “Ion-plasma treatment of mirrors of an injection-laser resonator”, Kvantovaya Elektronika, 7:9 (1980), 2054–2057 [Sov J Quantum Electron, 10:9 (1980), 1195–1196 ] |
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