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This article is cited in 18 scientific papers (total in 18 papers)
Synthesis of oxygen-doped graphitic carbon nitride from thiourea
N. M. Denisova, E. B. Chubenkoa, V. P. Bondarenkoa, V. E. Borisenkob a Belarussian State University of Computer Science and Radioelectronic Engineering, Minsk, Belarus
b National Research Nuclear University MEPhI, Moscow, Russia
Abstract:
We have synthesized oxygen-doped graphite-like carbon nitride (g-C$_3$N$_4$) by the thermal treatment of the thiourea at 450–550$^{\circ}$C. With an increase in the annealing temperature, the oxygen concentration in g-C$_3$N$_4$ increases, and the band-gap of the material decreases from 2.64 to 2.47 eV. The semiconductor properties of g-C$_3$N$_4$ doped with oxygen are confirmed by its high photocatalytic activity, determined by decoloration of a Rhodamine B aqueous solution in the presence of g-C$_3$N$_4$ upon irradiation with visible light.
Received: 28.08.2018
Citation:
N. M. Denisov, E. B. Chubenko, V. P. Bondarenko, V. E. Borisenko, “Synthesis of oxygen-doped graphitic carbon nitride from thiourea”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:3 (2019), 49–51; Tech. Phys. Lett., 45:2 (2019), 108–110
Linking options:
https://www.mathnet.ru/eng/pjtf5553 https://www.mathnet.ru/eng/pjtf/v45/i3/p49
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Abstract page: | 54 | Full-text PDF : | 12 |
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