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Publications in Math-Net.Ru |
Citations |
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2021 |
| 1. |
S. A. Blokhin, M. A. Bobrov, N. A. Maleev, A. A. Blokhin, A. P. Vasil'ev, A. G. Kuz'menkov, E. S. Kolodeznyi, V. A. Shchukin, N. N. Ledentsov, S. Reitzenstein, V. M. Ustinov, “The design of an electrically-driven single photon source of the 1.3-$\mu$m spectral range based on a vertical microcavity with intracavity contacts”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:5 (2021), 23–27   ; Tech. Phys. Lett., 47:3 (2021), 222–226 |
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2019 |
| 2. |
A. M. Nadtochiy, Yu. M. Shernyakov, M. M. Kulagina, A. S. Payusov, N. Yu. Gordeev, M. V. Maksimov, A. E. Zhukov, T. Denneulin, N. Cherkashin, V. A. Shchukin, N. N. Ledentsov, “InGaAlP/GaAs injection lasers of orangeoptical range ($\sim$600nm)”, Fizika i Tekhnika Poluprovodnikov, 53:12 (2019), 1708–1713 ; Semiconductors, 53:12 (2019), 1699–1704 |
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2018 |
| 3. |
S. A. Blokhin, M. A. Bobrov, A. A. Blokhin, A. G. Kuz'menkov, A. P. Vasil'ev, Yu. M. Zadiranov, E. A. Evropeitsev, A. V. Sakharov, N. N. Ledentsov, L. Ya. Karachinsky, A. M. Ospennikov, N. A. Maleev, V. M. Ustinov, “Emission-line width and $\alpha$-factor of 850-nm single-mode vertical-cavity surface-emitting lasers based on InGaAs/AlGaAs quantum wells”, Fizika i Tekhnika Poluprovodnikov, 52:1 (2018), 98–104 ; Semiconductors, 52:1 (2018), 93–99 |
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| 4. |
N. N. Ledentsov, V. A. Shchukin, V. P. Kalosha, N. N. Ledentsov, Jr., J. R. Kropp, M. Agustín, S. A. Blokhin, A. A. Blokhin, M. A. Bobrov, M. M. Kulagina, Yu. M. Zadiranov, N. A. Maleev, “A design and new functionality of antiwaveguiding vertical-cavity surface-emitting lasers for a wavelength of 850 nm”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:1 (2018), 85–94 ; Tech. Phys. Lett., 44:1 (2018), 36–39 |
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| 5. |
S. A. Blokhin, M. A. Bobrov, A. G. Kuz'menkov, A. A. Blokhin, A. P. Vasil'ev, Yu. A. Guseva, M. M. Kulagina, Yu. M. Zadiranov, N. A. Maleev, I. I. Novikov, L. Ya. Karachinsky, N. N. Ledentsov, V. M. Ustinov, “The influence of cavity design on the linewidth of near-ir single-mode vertical-cavity surface-emitting lasers”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:1 (2018), 67–75 ; Tech. Phys. Lett., 44:1 (2018), 28–31 |
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| 6. |
A. V. Babichev, L. Ya. Karachinsky, I. I. Novikov, A. G. Gladyshev, S. A. Blokhin, S. Mikhailov, V. Iakovlev, A. Sirbu, G. Stepniak, L. Chorchos, J. P. Turkiewicz, K. O. Voropaev, A. S. Ionov, M. Agustín, N. N. Ledentsov, A. Yu. Egorov, “Vertical-cavity surface-emitting 1.55-$\mu$m lasers fabricated by fusion”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:1 (2018), 59–66 ; Tech. Phys. Lett., 44:1 (2018), 24–27 |
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2017 |
| 7. |
S. A. Blokhin, M. A. Bobrov, A. A. Blokhin, A. G. Kuz'menkov, A. P. Vasil'ev, Yu. M. Zadiranov, E. A. Evropeitsev, A. V. Sakharov, N. N. Ledentsov, L. Ya. Karachinsky, A. M. Ospennikov, N. A. Maleev, V. M. Ustinov, “Emission-line width and $\alpha$-factor of 850-nm single-mode vertical-cavity surface-emitting lasers based on InGaAs/AlGaAs quantum wells”, Fizika i Tekhnika Poluprovodnikov, 51:12 (2017), 1697 ; Semiconductors, 52:1 (2018), 93–99 |
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2011 |
| 8. |
N. N. Ledentsov, J. A. Lott, “New-generation vertically emitting lasers as a key factor in the computer communication era”, UFN, 181:8 (2011), 884–890 ; Phys. Usp., 54:8 (2011), 853–858   |
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2002 |
| 9. |
G. A. Lyubas, N. N. Ledentsov, D. Litvinov, D. Gerthsen, I. P. Sotnikov, V. M. Ustinov, “Photoluminescence and the structure of heterointerfaces of (311)A-and (311)B-oriented GaAs/AlAs superlattices”, Pis'ma v Zh. Èksper. Teoret. Fiz., 75:4 (2002), 211–216 ; JETP Letters, 75:4 (2002), 179–183 |
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2001 |
| 10. |
I. L. Krestnikov, V. V. Lundin, A. V. Sakharov, D. A. Bedarev, E. E. Zavarin, Yu. G. Musikhin, N. M. Shmidt, A. F. Tsatsul'nikov, A. S. Usikov, N. N. Ledentsov, Zh. I. Alferov, “Heterostructures based on nitrides of group III elements: technical processes, properties, and light-emitting devices”, UFN, 171:8 (2001), 857–858 ; Phys. Usp., 44:8 (2001), 815–816 |
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| 11. |
V. M. Ustinov, N. A. Maleev, A. E. Zhukov, A. R. Kovsh, A. V. Sakharov, B. V. Volovik, A. F. Tsatsul'nikov, N. N. Ledentsov, Zh. I. Alferov, J. A. Lott, D. Bimberg, “Vertical-cavity emitting devices with quantum-dot structures”, UFN, 171:8 (2001), 855–857 ; Phys. Usp., 44:8 (2001), 813–815 |
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1999 |
| 12. |
L. E. Vorob'ev, D. A. Firsov, V. A. Shalygin, V. N. Tulupenko, N. N. Ledentsov, P. S. Kop'ev, V. M. Ustinov, Yu. M. Shernyakov, Zh. I. Alferov, “The outlook for the development of radiation sources in the middle-IR range based on the intraband transitions between the energy levels of charge carriers in injection laser heterostructures with quantum dots and wells”, UFN, 169:4 (1999), 459–464 ; Phys. Usp., 42:4 (1999), 391–396 |
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1997 |
| 13. |
D. Bimberg, I. P. Ipatova, P. S. Kop'ev, N. N. Ledentsov, V. G. Malyshkin, V. A. Shchukin, “Spontaneous ordering of semiconductor nanostructures”, UFN, 167:5 (1997), 552–555 ; Phys. Usp., 40:5 (1997), 529–532 |
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1996 |
| 14. |
N. N. Ledentsov, V. M. Ustinov, S. V. Ivanov, B. Ya. Mel'tser, M. V. Maksimov, P. S. Kop'ev, D. Bimberg, Zh. I. Alferov, “Ordered quantum-dot arrays in semiconducting matrices”, UFN, 166:4 (1996), 423–428 ; Phys. Usp., 39:4 (1996), 393–398 |
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1995 |
| 15. |
Zh. I. Alferov, D. Bimberg, A. Yu. Egorov, A. E. Zhukov, P. S. Kop'ev, N. N. Ledentsov, S. S. Ruvimov, V. M. Ustinov, I. Kheidenraikh, “Strained-submonolayer and quantum-dot superstructures”, UFN, 165:2 (1995), 224–225 ; Phys. Usp., 38:2 (1995), 215–216 |
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1992 |
| 16. |
Zh. I. Alferov, A. Y. Egorov, A. E. Zhukov, S. V. Ivanov, P. S. Kop'ev, N. N. Ledentsov, B. Ya. Mel'tser, V. M. Ustinov, “Выращивание квантовых кластеров GaAs$-$AlAs
на ориентированных не по (100) фасетированных поверхностях GaAs методом
молекулярно-пучковой эпитаксии”, Fizika i Tekhnika Poluprovodnikov, 26:10 (1992), 1715–1722 |
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1991 |
| 17. |
A. Y. Egorov, P. S. Kop'ev, N. N. Ledentsov, M. V. Maksimov, V. V. Mamutin, “GROWING COMPOUNDS IN THE SYSTEM OF YB-BA-CU-O WITH THE USE OF A BAO
MOLECULAR-BEAM”, Zhurnal Tekhnicheskoi Fiziki, 61:8 (1991), 106–114 |
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1990 |
| 18. |
P. S. Kop'ev, N. N. Ledentsov, “Гигантские диффузионные длины неравновесных носителей
в квантово-размерных гетероструктурах”, Fizika i Tekhnika Poluprovodnikov, 24:9 (1990), 1691–1693 |
| 19. |
P. S. Kop'ev, S. V. Ivanov, N. N. Ledentsov, B. Ya. Mel'tser, M. Y. Nadtochii, V. M. Ustinov, “Получение методом молекулярно-пучковой эпитаксии
гетероструктур GaSb/InAs/GaSb с высокой подвижностью двумерных электронов”, Fizika i Tekhnika Poluprovodnikov, 24:4 (1990), 717–719 |
| 20. |
Z. I. Alferov, V. V. Zhuravleva, S. V. Ivanov, P. S. Kop'ev, V. I. Korol'kov, N. N. Ledentsov, B. Ya. Mel'tser, T. S. Tabarov, “Электрические и оптические эффекты при резонансном туннелировании
в (Al, Ga)As$-$GaAs-гетероструктурах с двойным барьером”, Fizika i Tekhnika Poluprovodnikov, 24:2 (1990), 361–363 |
| 21. |
Z. I. Alferov, S. V. Ivanov, P. S. Kop'ev, N. N. Ledentsov, B. Ya. Mel'tser, S. V. Shaposhnikov, “(In, Ga, Al)As ДГС РО лазеры на длину волны 1.1 мкм с (In, Ga)As
напряженной квантовой ямой, ограниченной короткопериодной сверхрешеткой”, Fizika i Tekhnika Poluprovodnikov, 24:2 (1990), 359–361 |
| 22. |
Zh. I. Alferov, S. V. Ivanov, P. S. Kop'ev, N. N. Ledentsov, B. Ya. Mel'tser, M. E. Lutsenko, “(Al, Ga)As ДГС РО лазеры на длины волн 0.8 мкм (175 А/см$^{2}$)
и 0.73 мкм (350 A/см$^{2}$) с легированной квантовой ямой”, Fizika i Tekhnika Poluprovodnikov, 24:1 (1990), 201–203 |
| 23. |
Zh. I. Alferov, S. V. Ivanov, P. S. Kop'ev, N. N. Ledentsov, M. E. Lutsenko, B. Ya. Mel'tser, M. I. Nemenov, V. M. Ustinov, S. V. Shaposhnikov, “Растекание и поверхностная рекомбинация неравновесных носителей
в квантово-размерных (Al, Ga)As ДГС РО
лазерах с широким полоском”, Fizika i Tekhnika Poluprovodnikov, 24:1 (1990), 152–158 |
| 24. |
A. V. Bobyl, P. S. Kop'ev, N. N. Ledentsov, A. M. Mintairov, V. M. Ustinov, “EFFECT OF PHOTOINDUCED ELECTRON-HOLE PLASMA DECOMPOSITION IN SINGULAR
SELECTIVE-ALLOYED HETEROSTRUCTURES”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:20 (1990), 90–95 |
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1988 |
| 25. |
Z. I. Alferov, A. M. Vasilev, S. V. Ivanov, P. S. Kop'ev, N. N. Ledentsov, M. E. Lutsenko, B. Ya. Mel'tser, V. M. Ustinov, “REDUCTION OF THRESHOLD CURRENT-DENSITY IN GAAS-ALGAAS DHS
QUANTUM-DIMENSIONAL LASERS(JN=52ACM-2,T=300-K) UNDER THE LIMITATION OF A
QUANTUM HOLE BY THE SHORT-PERIOD SUPERLATTICE WITH VARIABLE-PITCH”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:19 (1988), 1803–1807 |
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1986 |
| 26. |
A. M. Vasil'ev, P. S. Kop'ev, V. P. Kochereshko, N. N. Ledentsov, B. Ya. Mel'tser, I. N. Ural'tsev, V. M. Ustinov, D. R. Yakovlev, “Intrinsic Luminescence of GaAs$-$Al$_{x}$Ga$_{1-x}$As Sharp HelerojimcLiou”, Fizika i Tekhnika Poluprovodnikov, 20:2 (1986), 353–356 |
| 27. |
Zh. I. Alferov, R. O. Djaparidze, S. V. Ivanov, P. S. Kop'ev, N. N. Ledentsov, B. Ya. Mel'tser, V. M. Ustinov, “Lasers based on heterostructures with active areas limited by multilayered lattices”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:9 (1986), 562–565 |
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1985 |
| 28. |
N. N. Ledentsov, B. Ya. Ber, P. S. Kop'ev, S. V. Ivanov, B. Ya. Mel'tser, V. M. Ustinov, G. M. Minchev, “EFFECT OF GROWTH-CONDITIONS ON THE HUM ADDITIONS IN GAAS ALLOYED LAYERS
GROWN BY MBE METHODS”, Zhurnal Tekhnicheskoi Fiziki, 55:1 (1985), 142–147 |
| 29. |
Zh. I. Alferov, P. S. Kopv, B. Ya. Ber, A. M. Vasil'ev, S. V. Ivanov, N. N. Ledentsov, B. Ya. Mel'tser, I. N. Ural'tsev, D. R. Yakovlev, “Intrinsic and Impurity Luminescence in GaAs$-$AlGaAs Structures with Quantum Wells”, Fizika i Tekhnika Poluprovodnikov, 19:4 (1985), 715–721 |
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1984 |
| 30. |
P. S. Kop'ev, B. Ya. Ber, S. V. Ivanov, N. N. Ledentsov, B. Ya. Mel'tser, V. M. Ustinov, “Effect of Growth Conditions on the Implantation of Background Impurities into Undoped GaAs Epitaxial Layers Grown by the Method of Molecular-Beam Epitaxy”, Fizika i Tekhnika Poluprovodnikov, 18:2 (1984), 270–274 |
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2010 |
| 31. |
A. F. Andreev, A. L. Aseev, E. P. Velikhov, A. A. Gorbatsevich, Yu. V. Gulyaev, A. E. Zhukov, L. V. Keldysh, G. Ya. Krasnikov, N. N. Ledentsov, Yu. S. Osipov, R. A. Suris, V. E. Fortov, “Zhores Ivanovich Alferov (on his 80th birthday)”, UFN, 180:3 (2010), 333–334 ; Phys. Usp., 53:3 (2010), 319–320 |
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2000 |
| 32. |
A. F. Andreev, E. P. Velikhov, V. E. Golant, Yu. V. Gulyaev, B. P. Zakharchenya, L. V. Keldysh, P. S. Kop'ev, N. N. Ledentsov, Yu. A. Osip'yan, A. M. Prokhorov, R. A. Suris, “Zhores Ivanovich Alferov (on his seventieth birthday)”, UFN, 170:3 (2000), 349–350 ; Phys. Usp., 43:3 (2000), 307–308 |
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