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Uspekhi Fizicheskikh Nauk, 1999, Volume 169, Number 4, Pages 459–464
DOI: https://doi.org/10.3367/UFNr.0169.199904g.0459
(Mi ufn1599)
 

This article is cited in 10 scientific papers (total in 10 papers)

CONFERENCES AND SYMPOSIA

The outlook for the development of radiation sources in the middle-IR range based on the intraband transitions between the energy levels of charge carriers in injection laser heterostructures with quantum dots and wells

L. E. Vorob'eva, D. A. Firsova, V. A. Shalygina, V. N. Tulupenkob, N. N. Ledentsovc, P. S. Kop'evc, V. M. Ustinovc, Yu. M. Shernyakovc, Zh. I. Alferovc

a Saint-Petersburg State Technical University
b Donbass State Engineering Academy
c Ioffe Institute, St. Petersburg
References:
Received: January 20, 1999
English version:
Physics–Uspekhi, 1999, Volume 42, Issue 4, Pages 391–396
DOI: https://doi.org/10.1070/PU1999v042n04ABEH000453
Bibliographic databases:
Document Type: Article
PACS: 01.10.Fv
Language: Russian


Citation: L. E. Vorob'ev, D. A. Firsov, V. A. Shalygin, V. N. Tulupenko, N. N. Ledentsov, P. S. Kop'ev, V. M. Ustinov, Yu. M. Shernyakov, Zh. I. Alferov, “The outlook for the development of radiation sources in the middle-IR range based on the intraband transitions between the energy levels of charge carriers in injection laser heterostructures with quantum dots and wells”, UFN, 169:4 (1999), 459–464; Phys. Usp., 42:4 (1999), 391–396
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    CONFERENCES AND SYMPOSIA
    This publication is cited in the following 10 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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