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Publications in Math-Net.Ru |
Citations |
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2019 |
| 1. |
G. S. Gagis, R. V. Levin, A. E. Marichev, B. V. Pushnii, M. P. Scheglov, B. Ya. Ber, D. Yu. Kazantsev, Yu. A. Kudriavtsev, A. S. Vlasov, T. B. Popova, D. V. Chistyakov, V. I. Kuchinskii, V. I. Vasil’ev, “Investigation of composition uniformity on thickness of GaInAsP layers grown on InP substrates by vapor-phase epitaxy”, Fizika i Tekhnika Poluprovodnikov, 53:11 (2019), 1512–1518   ; Semiconductors, 53:11 (2019), 1472–1478 |
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2018 |
| 2. |
K. D. Moiseev, Yu. A. Kudriavtsev, T. B. Charikova, A. M. Lugovykh, T. E. Govorkova, V. I. Okulov, “Effects of magnetic ordering in conductivity and magnetization of gaas-based semiconductor heterostructures upon changing the concentration of the delta-layer of manganese admixture”, Fizika Tverdogo Tela, 60:12 (2018), 2325–2330 ; Phys. Solid State, 60:12 (2018), 2402–2407 |
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2017 |
| 3. |
K. D. Moiseev, V. N. Nevedomskiy, Yu. Kudriavtsev, A. Escobosa-Echavarria, M. Lopez-Lopez, “On the delta-type doping of GaAs-based heterostructures with manganese compounds”, Fizika i Tekhnika Poluprovodnikov, 51:9 (2017), 1189–1195 ; Semiconductors, 51:9 (2017), 1141–1147 |
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V. M. Korol', A. V. Zastavnoi, Y. Kudriavtsev, R. Asomoza, “Negative annealing in silicon after the implantation of high-energy sodium ions”, Fizika i Tekhnika Poluprovodnikov, 51:5 (2017), 579–584 ; Semiconductors, 51:5 (2017), 549–555 |
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Yu. A. Kudriavtsev, R. Asomoza-Palacio, L. Manzanilla-Naim, “Interaction of water vapor with silicate glass surfaces: Mass-spectrometric investigations”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:9 (2017), 75–82 ; Tech. Phys. Lett., 43:5 (2017), 447–449 |
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2016 |
| 6. |
K. D. Moiseev, V. V. Romanov, Yu. A. Kudriavtsev, “Features of an InAsSbP epilayer formation on an InAs support by metalorganic vapor phase epitaxy”, Fizika Tverdogo Tela, 58:11 (2016), 2203–2207 ; Phys. Solid State, 58:11 (2016), 2285–2289 |
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| 7. |
A. M. Lugovykh, T. B. Charikova, V. I. Okulov, K. D. Moiseev, Yu. A. Kudriavtsev, “Charge transfer features and ferromagnetic order in semiconductor heterostructures $\delta$-doped with manganese”, Fizika Tverdogo Tela, 58:11 (2016), 2160–2163 ; Phys. Solid State, 58:11 (2016), 2240–2243 |
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